Technique | RF diode sputtering |
Target | Tin (99.99%) |
Gas | 50% Ar + 50% O2 |
Sputtering pressure | 14 mTorr |
Power | 150 W |
Substrate-to-target distance | 7.5 cm |
Substrate temperature | 25°C (no heating) |
Rate of deposition: | 60 nm/h |
30 | 1.2 × 105 | 3.6 × 104 | 240 | 1.05 |
60 | 1.0 × 105 | 2.7 × 104 | 220 | 1.19 |
90 | 8.6 × 104 | 1.3 × 104 | 240 | 2.90 |
120 | 6.0 × 104 | 1.4 × 104 | 220 | 1.97 |
150 | 5.8 × 104 | 1.2 × 104 | 200 | 1.40 |
180 | 5.4 × 104 | 1.1 × 104 | 180 | 1.15 |