Effectiveness of Geant4 in Monte Carlo Simulation Studyofphonon Conduction in Sn Host with Si Nanowire Interface

Publicado en línea: 21 ene 2020

Páginas: 12 - 21

Recibido: 06 feb 2019

Aceptado: 27 jun 2019

DOI: https://doi.org/10.2478/awutp-2019-0001

Palabras clave

Ballistic conduction, heat flow, MC simulation, Silicon – Tin, Geant4

© 2019 C. Iheduru et al., published by Sciendo

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.