Characterization of second-order chaotic circuits with heterogeneous memristors

Amnesia-resistive chaotic circuits have various application prospects due to their unique circuit characteristics. In this paper, by studying the relationship between memristors and chaotic circuits, two models of magneto-controlled memristors with smooth quadratic monotonic rise nonlinear characteristics are constructed based on Tsai’s circuit, and an active memristor circuit composed of negative conductance is combined to replace Tsai’s diode in Tsai’s circuit system, and then a magneto-controlled memristor is inserted between the LC resonant part of the circuit, thus establishing a heterogeneous memristor second-order chaotic circuit. Multisim is used for device modeling, circuit construction, and system composition and simulation. The simulation tests show that when t ∈ [0,900] ∪ [1800,2500], the system exhibits a chaotic state. When t ∈ (900,1800), the system exhibits a periodic state. As the initial value parameter d varies between [2,4.64], the state of the system shifts between chaotic and hyperchaotic states, while the complexity of the system changes back and forth. This study demonstrates that the heterogeneous magneto-controlled memristor chaotic circuit has a rich, chaotic behavior, providing an effective reference for applying chaotic memristor circuits.