<abstract xmlns="http://www.w3.org/1999/xhtml">

<p>Diamond, a wide bandgap semiconductor material, has excellent physicochemical properties. It has great potential for application in high temperature, high frequency, high power electronic devices and other high technology fields. In order to study the electronic properties of diamond more precisely, an AM-response surface model is developed in this paper to investigate the electronic structures of diamond, P-doped diamond and N-doped diamond surfaces in depth. It is shown that there are three forms of charge states in the single vacancy on the diamond surface. When E=0 V, the negative charge energy level is -0.5 mV, the positive charge is 1 mV, and the zero level remains 0. And its energy level is unstable. In contrast, the double vacancy charge on the diamond surface varies depending on the valence band taken by E, and only one charge state exists. When E&lt;0, the diamond surface vacant electron nature is negative charge state. When E>0, it is positive charge energy level. The electronic properties of the P-doped diamond semiconductor material are calculated to have a constant positive charge (1 mV). The electronic property of N-doped diamond semiconductor material is constant negative charge (-1mV).</p>
</abstract>

Diamond, a wide bandgap semiconductor material, has excellent physicochemical properties. It has great potential for application in high temperature, high frequency, high power electronic devices and other high technology fields. In order to study the electronic properties of diamond more precisely, an AM-response surface model is developed in this paper to investigate the electronic structures of diamond, P-doped diamond and N-doped diamond surfaces in depth. It is shown that there are three forms of charge states in the single vacancy on the diamond surface. When E=0 V, the negative charge energy level is -0.5 mV, the positive charge is 1 mV, and the zero level remains 0. And its energy level is unstable. In contrast, the double vacancy charge on the diamond surface varies depending on the valence band taken by E, and only one charge state exists. When E<0, the diamond surface vacant electron nature is negative charge state. When E>0, it is positive charge energy level. The electronic properties of the P-doped diamond semiconductor material are calculated to have a constant positive charge (1 mV). The electronic property of N-doped diamond semiconductor material is constant negative charge (-1mV).

Electronic properties of diamond semiconductor materials: based on response surface model

Applied Mathematics and Nonlinear Sciences

This work is licensed under the Creative Commons Attribution 4.0 International License.

Diamond, a wide bandgap semiconductor material, has excellent physicochemical properties. It has great potential for application in high temperature, high frequency, high power electronic devices and other high technology fields. In order to study the electronic properties of diamond more precisely, an AM-response surface model is developed in this paper to investigate the electronic structures of diamond, P-doped diamond and N-doped diamond surfaces in depth. It is shown that there are three forms of charge states in the single vacancy on the diamond surface. When E=0 V, the negative charge energy level is -0.5 mV, the positive charge is 1 mV, and the zero level remains 0. And its energy level is unstable. In contrast, the double vacancy charge on the diamond surface varies depending on the valence band taken by E, and only one charge state exists. When E0, it is positive charge energy level. The electronic properties of the P-doped diamond semiconductor material are calculated to have a constant positive charge (1 mV). The electronic property of N-doped diamond semiconductor material is constant negative charge (-1mV).

Diamond, a wide bandgap semiconductor material, has excellent physicochemical properties. It has great potential for application in high temperature, high...

Electronic properties of diamond semiconductor materials: based on response surface model

Publicado en línea: 28 abr 2023

Páginas: -

Recibido: 11 mar 2022

Aceptado: 17 jul 2022

DOI: https://doi.org/10.2478/amns.2023.1.00064

Palabras clave
diamond, semiconductor materials, AM algorithm, response surface model, electronic properties

© 2023 Sheng Bi et al., published by Sciendo

This work is licensed under the Creative Commons Attribution 4.0 International License.

Electronic properties of diamond semiconductor materials: based on response surface model

Publicado en línea: 28 abr 2023

Páginas: -

Recibido: 11 mar 2022

Aceptado: 17 jul 2022

DOI: https://doi.org/10.2478/amns.2023.1.00064

Palabras clavediamond, semiconductor materials, AM algorithm, response surface model, electronic properties

© 2023 Sheng Bi et al., published by Sciendo

This work is licensed under the Creative Commons Attribution 4.0 International License.

Palabras clave
diamond, semiconductor materials, AM algorithm, response surface model, electronic properties