<abstract xmlns="http://www.w3.org/1999/xhtml">

<p>Zinc oxide (ZnO), II-VI compound semiconductor with a wide band gap (3.4ev), has a stable wurtzite structure with lattice spacing a=0.325 nm and c=0.521nm. Its properties and potential for applications in photovoltaics, LED’s, spin electronics, ultraviolet light emitters, chemical sensors and transparent electronics has attracted intensive research. The objective of this thesis is to fabricate ZnO nanowires on gold coated silicon substrates using the chemical vapor transport (CVT) method. Under a constant flow of Argon gas (200mL/min), the substrates along with a mixture of ZnO and graphite powder are placed in a modified horizontal furnace which uses a 2.54 cm internally mounted quartz tube and are exposed to high temperature (527°C-1000°C) for different growth times. This reaction causes the formation of ZnO nanowires on the substrates. scanning electron microscopy is used to measure the size of the nanowires.</p></abstract>

Zinc oxide (ZnO), II-VI compound semiconductor with a wide band gap (3.4ev), has a stable wurtzite structure with lattice spacing a=0.325 nm and c=0.521nm. Its properties and potential for applications in photovoltaics, LED’s, spin electronics, ultraviolet light emitters, chemical sensors and transparent electronics has attracted intensive research. The objective of this thesis is to fabricate ZnO nanowires on gold coated silicon substrates using the chemical vapor transport (CVT) method. Under a constant flow of Argon gas (200mL/min), the substrates along with a mixture of ZnO and graphite powder are placed in a modified horizontal furnace which uses a 2.54 cm internally mounted quartz tube and are exposed to high temperature (527°C-1000°C) for different growth times. This reaction causes the formation of ZnO nanowires on the substrates. scanning electron microscopy is used to measure the size of the nanowires.

Method to Convert a Horizontal Furnace to Grow ZnO Nanowires for Gas Sensing by the VLS Method.

International Journal on Smart Sensing and Intelligent Systems

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Zinc oxide (ZnO), II-VI compound semiconductor with a wide band gap (3.4ev), has a stable wurtzite structure with lattice spacing a=0.325 nm and c=0.521nm. Its...

Method to Convert a Horizontal Furnace to Grow ZnO Nanowires for Gas Sensing by the VLS Method.

Publicado en línea: 15 feb 2020

Páginas: 1 - 5

DOI: https://doi.org/10.21307/ijssis-2019-107

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© 2019 Authors., published by Sciendo

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Method to Convert a Horizontal Furnace to Grow ZnO Nanowires for Gas Sensing by the VLS Method.

Publicado en línea: 15 feb 2020

Páginas: 1 - 5

DOI: https://doi.org/10.21307/ijssis-2019-107

Palabras clavecomponent, formatting, style, styling, insert (key words)

© 2019 Authors., published by Sciendo

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Palabras clave
component, formatting, style, styling, insert (key words)