0.35 μm CMOS Optical Sensor for an Integrated Transimpedance Circuit
, , y
01 sept 2011
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Publicado en línea: 01 sept 2011
Páginas: 467 - 481
Recibido: 05 jul 2011
Aceptado: 18 ago 2011
DOI: https://doi.org/10.21307/ijssis-2017-451
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© 2011 H. Escid et al., published by Sciendo
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.
This paper presents an integrated optical receiver which consists of an integrated photodetector, and a transimpedance circuit. A series inductive peaking is used for enhancing the bandwidth. The proposed structure operates at a data rate of 10 Gb/s with a BER of Iff20 and was implemented in a 0.35 μm CMOS process.
The integrated photodiode has a capacitance of 0.01 pF which permits to the structure to achieve a wide bandwidth (5.75 GHz) with only one inductor before the last stage; hence a smaller silicon area is maintained. The proposed TIA has a gain of36.56 dBΩ (67.57 KΩ), and an input courant noise level of about 25.8 pA/Hz0.5. It consumes a DC power of 87.4 mW from 3.3 V supply voltage.