<abstract xmlns="http://www.w3.org/1999/xhtml"><p>An automatic MOS structure parameter extraction algorithm accounting for quantum effects has been developed and applied in the semiconductor device analyzer Agilent B1500A. Parameter extraction is based on matching the experimental C-V data with numerical modeling results. The algorithm is used to extract the parameters of test MOS structures with ultrathin gate dielectrics. The applicability of the algorithm for the determination of distribution function of DOS and finding the donor defect level in silicon is shown.</p></abstract>

An automatic MOS structure parameter extraction algorithm accounting for quantum effects has been developed and applied in the semiconductor device analyzer Agilent B1500A. Parameter extraction is based on matching the experimental C-V data with numerical modeling results. The algorithm is used to extract the parameters of test MOS structures with ultrathin gate dielectrics. The applicability of the algorithm for the determination of distribution function of DOS and finding the donor defect level in silicon is shown.

Automatic Parameter Extraction Technique for MOS Structures by C-V Characterization Including the Effects of Interface States

Scientific and Manufacturing Complex “Technological Center”, Georgievsky prospect 5, 124498, Zelenograd, Moscow,

Measurement Science Review

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

An automatic MOS structure parameter extraction algorithm accounting for quantum effects has been developed and applied in the semiconductor device analyzer...

Automatic Parameter Extraction Technique for MOS Structures by C-V Characterization Including the Effects of Interface States

Publicado en línea: 26 oct 2016

Páginas: 266 - 272

Recibido: 02 mar 2016

Aceptado: 06 oct 2016

DOI: https://doi.org/10.1515/msr-2016-0033

Palabras clave
C-V measurement, parameter extraction, interface states, quantum simulation, MOS

© 2016 D. V. Ryazantsev et al., published by De Gruyter Open

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Automatic Parameter Extraction Technique for MOS Structures by C-V Characterization Including the Effects of Interface States

Publicado en línea: 26 oct 2016

Páginas: 266 - 272

Recibido: 02 mar 2016

Aceptado: 06 oct 2016

DOI: https://doi.org/10.1515/msr-2016-0033

Palabras claveC-V measurement, parameter extraction, interface states, quantum simulation, MOS

© 2016 D. V. Ryazantsev et al., published by De Gruyter Open

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Palabras clave
C-V measurement, parameter extraction, interface states, quantum simulation, MOS