<abstract xmlns="http://www.w3.org/1999/xhtml">Heavily In doped zinc oxide (IZO) thin films were deposited on glass substrates by dip-coating method with different concentrations of indium. The effect of heavy In doping on the structural, morphological, optical and electrical properties of ZnO was discussed on the basis of XRD, AFM, UV-Vis spectra and Hall effect measurements. The diffraction patterns of all deposited films were indexed to the ZnO wurtzite structure. However, high In doping damaged the films crystallinity. The highest optical transmittance observed in the visible region (>93 %) exceeded that of ITO: the absolute rival of the most commercial TCOs. The grain size significantly decreased from 140 nm for undoped ZnO to 17.1 nm for IZO with the greatest In ratio. The roughness decreased with increasing In atomic ratio, indicating an improvement in the surface quality. Among all synthesized films, the sample obtained with 11 at.% indium showed the best TCO properties: the highest transmittance (93.5 %) and the lowest resistivity (0.41 Ωcm) with a carrier concentration of 2.4 × 1017 cm−3. These results could be a promising solution for possible photonic and optoelectronic applications.</abstract>

Heavily In doped zinc oxide (IZO) thin films were deposited on glass substrates by dip-coating method with different concentrations of indium. The effect of heavy In doping on the structural, morphological, optical and electrical properties of ZnO was discussed on the basis of XRD, AFM, UV-Vis spectra and Hall effect measurements. The diffraction patterns of all deposited films were indexed to the ZnO wurtzite structure. However, high In doping damaged the films crystallinity. The highest optical transmittance observed in the visible region (>93 %) exceeded that of ITO: the absolute rival of the most commercial TCOs. The grain size significantly decreased from 140 nm for undoped ZnO to 17.1 nm for IZO with the greatest In ratio. The roughness decreased with increasing In atomic ratio, indicating an improvement in the surface quality. Among all synthesized films, the sample obtained with 11 at.% indium showed the best TCO properties: the highest transmittance (93.5 %) and the lowest resistivity (0.41 Ωcm) with a carrier concentration of 2.4 × 1017 cm−3. These results could be a promising solution for possible photonic and optoelectronic applications.

High transparency and conductivity of heavily In-doped ZnO thin films deposited by dip-coating method

Laboratoire des Composants Actifs et Matériaux (LCAM)

Laboratoire des Matériaux et Structures des Systèmes Electromécaniques et leur Fiabilité (LMSSEF)

Materials Science-Poland

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

Heavily In doped zinc oxide (IZO) thin films were deposited on glass substrates by dip-coating method with different concentrations of indium. The effect of...

High transparency and conductivity of heavily In-doped ZnO thin films deposited by dip-coating method

Publicado en línea: 02 nov 2018

Páginas: 427 - 434

Recibido: 27 jun 2017

Aceptado: 24 mar 2018

DOI: https://doi.org/10.1515/msp-2018-0037

Palabras clave
ZnO:In, dip coating, resistivity, transparency, crystallinity

© 2018 S. Benzitouni et al., published by Sciendo

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

High transparency and conductivity of heavily In-doped ZnO thin films deposited by dip-coating method

Publicado en línea: 02 nov 2018

Páginas: 427 - 434

Recibido: 27 jun 2017

Aceptado: 24 mar 2018

DOI: https://doi.org/10.1515/msp-2018-0037

Palabras claveZnO:In, dip coating, resistivity, transparency, crystallinity

© 2018 S. Benzitouni et al., published by Sciendo

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

Palabras clave
ZnO:In, dip coating, resistivity, transparency, crystallinity