<abstract xmlns="http://www.w3.org/1999/xhtml"><p> The objective of the present research work is to optimize the growth conditions of bi- tri- and few-layer graphene using pulsed laser deposition (PLD) technique. The graphene was grown on n-type silicon (1 0 0) at 530 °C. Raman spectroscopy of the grown films revealed that the growth of low defect tri-layer graphene depended upon Ni content and uniformity of the Ni film. The line profile analysis of the AFM micrographs of the films also confirmed the formation of bi- tri- and a few-layer graphene. The deposited uniform Ni film matrix and carbon/Ni thickness ratio are the controlling factors for the growth of bitri- or few- layer graphene using pulsed laser deposition technique.</p></abstract>

The objective of the present research work is to optimize the growth conditions of bi- tri- and few-layer graphene using pulsed laser deposition (PLD) technique. The graphene was grown on n-type silicon (1 0 0) at 530 °C. Raman spectroscopy of the grown films revealed that the growth of low defect tri-layer graphene depended upon Ni content and uniformity of the Ni film. The line profile analysis of the AFM micrographs of the films also confirmed the formation of bi- tri- and a few-layer graphene. The deposited uniform Ni film matrix and carbon/Ni thickness ratio are the controlling factors for the growth of bitri- or few- layer graphene using pulsed laser deposition technique.

Bi- tri- and few-layer graphene growth by PLD technique using Ni as catalyst

Materials Science-Poland

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

{"article-title":"Bi- tri- and few-layer graphene growth by PLD technique using Ni as catalyst"}

The objective of the present research work is to optimize the growth conditions of bi- tri- and few-layer graphene using pulsed laser deposition (PLD)...

Bi- tri- and few-layer graphene growth by PLD technique using Ni as catalyst

Publicado en línea: 20 mar 2018

Páginas: 687 - 693

Recibido: 24 ene 2016

Aceptado: 18 nov 2017

DOI: https://doi.org/10.1515/msp-2017-0099

Palabras clave
graphene, Raman spectroscopy, atomic force microscopy, pulsed laser deposition

© 2018

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

Bi- tri- and few-layer graphene growth by PLD technique using Ni as catalyst

Publicado en línea: 20 mar 2018

Páginas: 687 - 693

Recibido: 24 ene 2016

Aceptado: 18 nov 2017

DOI: https://doi.org/10.1515/msp-2017-0099

Palabras clavegraphene, Raman spectroscopy, atomic force microscopy, pulsed laser deposition

© 2018

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

Palabras clave
graphene, Raman spectroscopy, atomic force microscopy, pulsed laser deposition