<abstract xmlns="http://www.w3.org/1999/xhtml"><p> In this study, the effect of boron (B) incorporation into zinc oxide (ZnO) has been investigated. The undoped, 2 at.%. and 4 at.% B doped ZnO films were deposited on p-type silicon (Si) substrates by electrodeposition method using chronoamperometry technique. Electrochemical depositions were performed by applying a constant potentiostatic voltage of 1.1 V for 180 min at 90 °C bath temperature. To analyze the surface morphology, field emission scanning electron microscopy (FESEM) was used and the results revealed that while a small amount of boron resulted in smoother surface, a little more incorporation of boron changed the surface morphology to dandelion-like shaped rods on the whole surface. By using X-ray diffraction (XRD) analysis, the crystal structures of the films were detected and the preferred orientation of the ZnO, which exhibited polycrystalline and hexagonal wurtzite structure, changed with B doping. For the estimation of the optical band gap of obtained films, UV-Vis diffuse reflectance spectra (DRS) of the films were taken at room temperature and these data were applied to the Kubelka-Munk function. The optical band gap of ZnO narrowed due to incorporation of B, which was confirmed by red-shift.</p></abstract>

In this study, the effect of boron (B) incorporation into zinc oxide (ZnO) has been investigated. The undoped, 2 at.%. and 4 at.% B doped ZnO films were deposited on p-type silicon (Si) substrates by electrodeposition method using chronoamperometry technique. Electrochemical depositions were performed by applying a constant potentiostatic voltage of 1.1 V for 180 min at 90 °C bath temperature. To analyze the surface morphology, field emission scanning electron microscopy (FESEM) was used and the results revealed that while a small amount of boron resulted in smoother surface, a little more incorporation of boron changed the surface morphology to dandelion-like shaped rods on the whole surface. By using X-ray diffraction (XRD) analysis, the crystal structures of the films were detected and the preferred orientation of the ZnO, which exhibited polycrystalline and hexagonal wurtzite structure, changed with B doping. For the estimation of the optical band gap of obtained films, UV-Vis diffuse reflectance spectra (DRS) of the films were taken at room temperature and these data were applied to the Kubelka-Munk function. The optical band gap of ZnO narrowed due to incorporation of B, which was confirmed by red-shift.

FESEM, XRD and DRS studies of electrochemically deposited boron doped ZnO films

Materials Science-Poland

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{"article-title":"FESEM, XRD and DRS studies of electrochemically deposited boron doped ZnO films"}

In this study, the effect of boron (B) incorporation into zinc oxide (ZnO) has been investigated. The undoped, 2 at.%. and 4 at.% B doped ZnO films were...

FESEM, XRD and DRS studies of electrochemically deposited boron doped ZnO films

Publicado en línea: 20 mar 2018

Páginas: 824 - 829

Recibido: 28 mar 2017

Aceptado: 08 oct 2017

DOI: https://doi.org/10.1515/msp-2017-0091

Palabras clave
B doped ZnO, electrodeposition, rod-shaped morphology, Kubelka-Munk

© 2018

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

FESEM, XRD and DRS studies of electrochemically deposited boron doped ZnO films

Publicado en línea: 20 mar 2018

Páginas: 824 - 829

Recibido: 28 mar 2017

Aceptado: 08 oct 2017

DOI: https://doi.org/10.1515/msp-2017-0091

Palabras claveB doped ZnO, electrodeposition, rod-shaped morphology, Kubelka-Munk

© 2018

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

Palabras clave
B doped ZnO, electrodeposition, rod-shaped morphology, Kubelka-Munk