<abstract xmlns="http://www.w3.org/1999/xhtml"><p> Aluminum-doped zinc oxide (AZO) thin films were prepared by magnetron sputtering method. The influences of deposition pressure, substrate temperature, Ar flow rate and film thickness on optical and electrical properties were investigated using ultraviolet-visible (UV-Vis) spectrometer and Hall measurements. The experimental results revealed that a low resistivity, smaller than 4 × 10<sup>-4</sup> Ω·cm, was obtained when the deposition pressure was smaller than 0.67 Pa and substrate temperature about 200 °C. Ar flow rate had a small influence on the resistivity but a big influence on the transparency at near infrared range (NIR). We obtained optimized AZO thin films with high ponductivity and transparency at low deposition pressure, small Ar flow and appropriate temperature (around 200 °C). The etching behavior of the AZO thin films deposited at the different Ar flow rates was also studied in this paper. The results show that Ar flow rate is a very important factor affecting the etching behavior. </p></abstract>

Aluminum-doped zinc oxide (AZO) thin films were prepared by magnetron sputtering method. The influences of deposition pressure, substrate temperature, Ar flow rate and film thickness on optical and electrical properties were investigated using ultraviolet-visible (UV-Vis) spectrometer and Hall measurements. The experimental results revealed that a low resistivity, smaller than 4 × 10-4 Ω·cm, was obtained when the deposition pressure was smaller than 0.67 Pa and substrate temperature about 200 °C. Ar flow rate had a small influence on the resistivity but a big influence on the transparency at near infrared range (NIR). We obtained optimized AZO thin films with high ponductivity and transparency at low deposition pressure, small Ar flow and appropriate temperature (around 200 °C). The etching behavior of the AZO thin films deposited at the different Ar flow rates was also studied in this paper. The results show that Ar flow rate is a very important factor affecting the etching behavior.

Al-doped ZnO films deposited by magnetron sputtering: effect of sputtering parameters on the electrical and optical properties

Materials Science-Poland

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

Aluminum-doped zinc oxide (AZO) thin films were prepared by magnetron sputtering method. The influences of deposition pressure, substrate temperature, Ar flow...

Al-doped ZnO films deposited by magnetron sputtering: effect of sputtering parameters on the electrical and optical properties

Publicado en línea: 26 jul 2017

Páginas: 374 - 381

Recibido: 28 sept 2016

Aceptado: 06 feb 2017

DOI: https://doi.org/10.1515/msp-2017-0038

Palabras clave
AZO thin films, optical and electrical properties, morphology

© 2017

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

Al-doped ZnO films deposited by magnetron sputtering: effect of sputtering parameters on the electrical and optical properties

Publicado en línea: 26 jul 2017

Páginas: 374 - 381

Recibido: 28 sept 2016

Aceptado: 06 feb 2017

DOI: https://doi.org/10.1515/msp-2017-0038

Palabras claveAZO thin films, optical and electrical properties, morphology

© 2017

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

Palabras clave
AZO thin films, optical and electrical properties, morphology