This article is distributed under the terms of the Creative Commons Attribution Non-Commercial License, which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.
Delannoy Y., J. Cryst. Growth, 360 (2012), 61.DelannoyY.36020126110.1016/j.jcrysgro.2011.12.006Search in Google Scholar
Martorano M.A., Ferreira Neto J.B., Oliveira T.S., Tsubaki T.O., Mater. Sci. Eng. B-Adv., 176 (2011), 217.MartoranoM.A.Ferreira NetoJ.B.OliveiraT.S.TsubakiT.O.176201121710.1016/j.mseb.2010.11.010Search in Google Scholar
Jiang D.C., Tan Y., Shi S., Dong W., Gu Z., Zou R.X., Mater. Lett., 78 (2012), 4.JiangD.C.TanY.ShiS.DongW.GuZ.ZouR.X.782012410.1016/j.matlet.2012.03.031Search in Google Scholar
Kemmotsu T., Nagai T., Maeda M., High Temp. Mat. Pr.-Isr., 30 (2011), 17.KemmotsuT.NagaiT.MaedaM.3020111710.1515/htmp.2011.002Search in Google Scholar
Wu J.J., Li Y.L., Ma W.H., Liu K., Wei K.X., Xie K.Q., Yang B., Dai Y.N., Silicon-Neth., 6 (2014), 79.WuJ.J.LiY.L.MaW.H.LiuK.WeiK.X.XieK.Q.YangB.DaiY.N.620147910.1007/s12633-013-9158-ySearch in Google Scholar
Nakamura N., Baba H., Sakaguchi Y., J. Jpn. I. Met., 67 (2003), 583.NakamuraN.BabaH.SakaguchiY.67200358310.2320/jinstmet1952.67.10_583Search in Google Scholar
Zhang L., Tan Y., Xu F.M., Li J.Y., Wang H.Y., Gu Z., Sep. Sci. Technol., 48 (7) (2013), 1140.ZhangL.TanY.XuF.M.LiJ.Y.WangH.Y.GuZ.4872013114010.1080/01496395.2012.714438Search in Google Scholar
Yoshikawa T., Morita K., Metall. Mater. Trans. B, 36 (2005), 731.YoshikawaT.MoritaK.36200573110.1007/s11663-005-0076-2Search in Google Scholar
Abadli S., Mansour F., Bedel Pereira E., Cryst. Res. Technol., 47 (10) (2012), 1047.AbadliS.MansourF.Bedel PereiraE.47102012104710.1002/crat.201200199Search in Google Scholar
Aoyama T., Suzuki K., Toda Y., Yamazaki T., Takashi K., Ito T., J. Appl. Phys., 77 (1995), 417.AoyamaT.SuzukiK.TodaY.YamazakiT.TakashiK.ItoT.77199541710.1063/1.359343Search in Google Scholar
Grove A.S., Leistiko O., Sah C.T., J. Appl. Phys., 35 (1964), 2695.GroveA.S.LeistikoO.SahC.T.351964269510.1063/1.1713825Search in Google Scholar
Fair R.B., J. Electrochem. Soc., 144 (1997), 709.FairR.B.144199770910.1149/1.1837473Search in Google Scholar
Li W.Q., Zhang H.B., Acta Phys. Sin.-Ch. Ed., 57 (2008), 3219.LiW.Q.ZhangH.B.572008321910.7498/aps.57.3219Search in Google Scholar
Tan Y., Qin S.Q., Wen S.T., Li J.Y., Shi S., Jiang D.C., Pang D.Y., Mat. Sci. Semicon. Proc., 18 (2014), 42.TanY.QinS.Q.WenS.T.LiJ.Y.ShiS.JiangD.C.PangD.Y.1820144210.1016/j.mssp.2013.10.006Search in Google Scholar
Suzuki K., Miyashita T., IEEE T. Electron Dev., 47 (2000), 524.SuzukiK.MiyashitaT.47200052410.1109/16.824721Search in Google Scholar
Ohsawa A., Honda K., Toyokura N., J. Electrochem. Soc., 131 (1984), 2968.OhsawaA.HondaK.ToyokuraN.1311984296810.1149/1.2115451Search in Google Scholar
Wolf H.F., Silicon Semiconductor Data, Pergamon, London, 1969.WolfH.F.PergamonLondon1969Search in Google Scholar
Baierle R.J., Caldas M.J., Dabrowski J., Mussig H.J., Zavodinsky V., Physica B, 273 (1999), 260.BaierleR.J.CaldasM.J.DabrowskiJ.MussigH.J.ZavodinskyV.273199926010.1016/S0921-4526(99)00477-9Search in Google Scholar