<abstract xmlns="http://www.w3.org/1999/xhtml">Bismuth oxide thin film was deposited by chemical bath deposition (CBD) technique onto a glass substrate. The grain size (D), dislocation density (δ) and number of crystallites per unit area (N), i.e. structural properties of the thin film were determined as 16 nm, 39.06× 10–4 line/nm2, 31.25 × 10–3 1/nm2, respectively. Optical transmittance properties of the thin film were investigated by using a UV-Vis spectrophotometer. The optical band gap (Eg) for direct transitions, optical transmission (T %), reflectivity (R %), absorption, refractive index (nr), extinction coefficient (k), dielectric constant (∊) of the thin film were found to be 3.77 eV, 25.23 %, 32.25 %, 0.59, 3.62, 0.04 and 2.80, respectively. The thickness of the film was measured by AFM, and was found to be 128 nm. Contact angles of various liquids on the oxide thin film were determined by Zisman method, and surface tension was calculated to be 31.95 mN/m.</abstract>

Bismuth oxide thin film was deposited by chemical bath deposition (CBD) technique onto a glass substrate. The grain size (D), dislocation density (δ) and number of crystallites per unit area (N), i.e. structural properties of the thin film were determined as 16 nm, 39.06× 10–4 line/nm2, 31.25 × 10–3 1/nm2, respectively. Optical transmittance properties of the thin film were investigated by using a UV-Vis spectrophotometer. The optical band gap (Eg) for direct transitions, optical transmission (T %), reflectivity (R %), absorption, refractive index (nr), extinction coefficient (k), dielectric constant (∊) of the thin film were found to be 3.77 eV, 25.23 %, 32.25 %, 0.59, 3.62, 0.04 and 2.80, respectively. The thickness of the film was measured by AFM, and was found to be 128 nm. Contact angles of various liquids on the oxide thin film were determined by Zisman method, and surface tension was calculated to be 31.95 mN/m.

Synthesis, surface tension, optical and dielectric properties of bismuth oxide thin film

Department of Metallurgy and Materials Engineering

Department of Science Education, Education Faculty

Materials Science-Poland

This article is distributed under the terms of the Creative Commons Attribution Non-Commercial License, which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.

Bismuth oxide thin film was deposited by chemical bath deposition (CBD) technique onto a glass substrate. The grain size (D), dislocation density (δ) and...

Synthesis, surface tension, optical and dielectric properties of bismuth oxide thin film

Publicado en línea: 10 mar 2017

Páginas: 87 - 93

Recibido: 21 nov 2015

Aceptado: 03 ene 2016

DOI: https://doi.org/10.1515/msp-2017-0020

Palabras clave
CBD technique, crystal growth, Zisman method, optical properties, surface tension

© 2017 Fatma Meydanerİ Tezel, İ. Afşin Kariper

This article is distributed under the terms of the Creative Commons Attribution Non-Commercial License, which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.

Synthesis, surface tension, optical and dielectric properties of bismuth oxide thin film

Publicado en línea: 10 mar 2017

Páginas: 87 - 93

Recibido: 21 nov 2015

Aceptado: 03 ene 2016

DOI: https://doi.org/10.1515/msp-2017-0020

Palabras claveCBD technique, crystal growth, Zisman method, optical properties, surface tension

© 2017 Fatma Meydanerİ Tezel, İ. Afşin Kariper

This article is distributed under the terms of the Creative Commons Attribution Non-Commercial License, which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.

Palabras clave
CBD technique, crystal growth, Zisman method, optical properties, surface tension