This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.
Geisz J.F., Friedman D.J., Semicond. Sci. Tech., 17 (2002), 769.GeiszJ.F.FriedmanD.J.17200276910.1088/0268-1242/17/8/305Search in Google Scholar
Kurtz S.R., Allerman A.A., Jones E.D., Gee J.M., Banas J.J., HammonS B.E., Appl. Phys. Lett., 74 (1999), 729.KurtzS.R.AllermanA.A.JonesE.D.GeeJ.M.BanasJ.J.HammonSB.E.74199972910.1063/1.123105Search in Google Scholar
Kondow M., Uomi K., Niwa A., Kitatani T., Watahiki S., Yazawa Y., Jpn. J. Appl. Phys., 35 (1996), 1273.KondowM.UomiK.NiwaA.KitataniT.WatahikiS.YazawaY.351996127310.1143/JJAP.35.1273Search in Google Scholar
Fischer M., Gollub D., Reinhardt M., Kamp M., Forchel A., J. Cryst. Growth, 251 (2003), 353.FischerM.GollubD.ReinhardtM.KampM.ForchelA.251200335310.1016/S0022-0248(02)02435-1Search in Google Scholar
Ściana B., Zborowska-Lindert I., Pucicki D., BoratyŃski B., Radziewicz D., TŁaczaŁa M., Serafinczuk J., Poloczek P., SĘk G., Misiewicz J., Opto-Electron. Rev., 16 (2008), 1.ŚcianaB.Zborowska-LindertI.PucickiD.BoratyŃskiB.RadziewiczD.TŁaczaŁaM.SerafiŃczukJ.PoloczekP.SĘkG.MisiewiczJ.162008110.2478/s11772-007-0034-4Search in Google Scholar
Buyanova I.A., Chen W.M., Tu C.W., J. Phys.- Condens. Mat., 16 (2004), S3027.BuyanovaI.A.ChenW.M.TuC.W.162004S302710.1088/0953-8984/16/31/003Search in Google Scholar
Li W., Pessa M., Ahlgren T., Dekker J., Appl. Phys. Lett., 79 (2001), 1094.LiW.PessaM.AhlgrenT.DekkerJ.792001109410.1063/1.1396316Search in Google Scholar
Khan A., Kurtz S.R., Prasad S., Johnston S.W., Gou J., Appl. Phys. Lett., 90 (2007), 243509.KhanA.KurtzS.R.PrasadS.JohnstonS.W.GouJ.90200724350910.1063/1.2747664Search in Google Scholar
Ściana B., Radziewicz D., Pucicki D., Zborowska-Lindert I., SerafiŃczuk J., TŁaczaŁa M., Latkowska M., KovÁČ J., Srnanek R., Cryst. Res. Technol., 47 (2012), 313.ŚcianaB.RadziewiczD.PucickiD.Zborowska-LindertI.SerafinczukJ.TŁaczaŁaM.LatkowskaM.KovÁČJ.SrnanekR.47201231310.1002/crat.201100415Search in Google Scholar
Shan W., Walukiewicz W., Ager III J.W., Haller E., Geisz J.F., Friedman D.J., Olson J.M., Kurtz S.R., Phys. Rev. Lett., 82 (1999), 1221.ShanW.WalukiewiczW.Ager IIIJ.W.HallerE.GeiszJ.F.FriedmanD.J.OlsonJ.M.KurtzS.R.821999122110.1103/PhysRevLett.82.1221Search in Google Scholar
Kamyczek P., BiegaŃski P., PŁaczek-Popko E., Zielony E., Gelczuk Ł., Ściana B., Pucicki D., Radziewicz D., TŁaczaŁa M., Kopalko K., DĄbrowska-Szata M., Mater. Sci.-Poland, 31 (2013), 595.KamyczekP.BiegaŃskiP.PŁaczek-PopkoE.ZielonyE.GelczukŁ.ŚcianaB.PucickiD.RadziewiczD.TŁaczaŁaM.KopalkoK.DĄbrowska-SzataM.31201359510.2478/s13536-013-0144-2Search in Google Scholar
Blood P., Orton J.W., Characterization of Semiconductors: Majority Carriers and Electron States, Academic Press, London, 1992.BloodP.OrtonJ.W.Academic PressLondon1992Search in Google Scholar
Tanaka S., Moto A., Takahashi M., Tanabe T., Takagishi S., J. Cryst. Growth, 221 (2000),467.TanakaS.MotoA.TakahashiM.TanabeT.TakagishiS.221200046710.1016/S0022-0248(00)00746-6Search in Google Scholar
Krispin P., Spruette S.G., Harris J.S., Ploog K. H., J. Appl. Phys., 88 (2000),4153.KrispinP.SpruetteS.G.HarrisJ.S.PloogK. H.882000415310.1063/1.1290449Search in Google Scholar
Bouzazi B., Suzuki H., Kojami N., Ohsita Y., Yamaguchi M.,Physica B, 406 (2011),1070.BouzaziB.SuzukiH.KojamiN.OhsitaY.YamaguchiM.4062011107010.1016/j.physb.2010.11.086Search in Google Scholar
Geisz J.F., Friedman D.J., Olson J.M., Kurtz S.R., Keyes B.M., J. Cryst. Growth, 195 (1998),401.GeiszJ.F.FriedmanD.J.OlsonJ.M.KurtzS.R.KeyesB.M.195199840110.1016/S0022-0248(98)00563-6Search in Google Scholar
Moto A., Takahashi M., Takagishi S.,J. Cryst. Growth, 221 (2000),485.MotoA.TakahashiM.TakagishiS.221200048510.1016/S0022-0248(00)00749-1Search in Google Scholar
Kaplar R.J., Kwon D., Ringel S.A., Allerman A.A., Kurtz S.R., Jones E.D., Sieg R.M., Sol. Energ. Mat. Sol. C., 69 (2001),851.KaplarR.J.KwonD.RingelS.A.AllermanA.A.KurtzS.R.JonesE.D.SiegR.M.69200185110.1016/S0927-0248(00)00380-9Search in Google Scholar
Gelczuk Ł., Stokowski H., Dabrowska-Szata M., Kudrawiec R., J. Appl. Phys., 119 (2016),185706.GelczukŁ.StokowskiH.Dabrowska-SzataM.KudrawiecR.119201618570610.1063/1.4949514Search in Google Scholar
Gelczuk Ł., Dabrowska-Szata M., Pucicki D., Acta Phys. Pol. A, 126 (20014), 1195.GelczukŁ.Dabrowska-SzataM.PucickiD.12620014119510.12693/APhysPolA.126.1195Search in Google Scholar
Dobaczewski L., Peaker A.R., Bonde-Nielsen K., J. Appl. Phys., 96 (2004),4689.DobaczewskiL.PeakerA.R.Bonde-NielsenK.962004468910.1063/1.1794897Search in Google Scholar
Zhang S.B., Wei S.-H., Phys. Rev. Lett., 86 (2001), 1789.ZhangS.B.WeiS.-H.862001178910.1103/PhysRevLett.86.1789Search in Google Scholar
Spruytte S.G., Coldren C.W., Harris J.S., Wampler W., Krispin P., Ploog K., Larson M.C., J. Appl. Phys., 89 (2001), 4401.SpruytteS.G.ColdrenC.W.HarrisJ.S.WamplerW.KrispinP.PloogK.LarsonM.C.892001440110.1063/1.1352675Search in Google Scholar
Li W., Pessa M., Likonen J., Appl. Phys. Lett., 78 (2001), 2864.LiW.PessaM.LikonenJ.782001286410.1063/1.1370549Search in Google Scholar
Krispin P., Gambin V., Harris J.S., Ploog K.H., J. Appl. Phys., 93 (2003), 6095.KrispinP.GambinV.HarrisJ.S.PloogK.H.932003609510.1063/1.1568523Search in Google Scholar
Shafi M., Mari R.H., Henini M., Taylor D., Hopkinson M., Phys. Status Solidi C, 6 (2009), 2652.ShafiM.MariR.H.HeniniM.TaylorD.HopkinsonM.62009265210.1002/pssc.200982561Search in Google Scholar
Johnston S.W., Kurtz S.R., J. Vac. Sci. Technol. A, 24 (2006), 1252.JohnstonS.W.KurtzS.R.242006125210.1116/1.2167081Search in Google Scholar
Martin G.M., Mitonneau M., Mircea A., Electron. Lett.,13 (7) (1977), 191.MartinG.M.MitonneauM.MirceaA.137197719110.1049/el:19770140Search in Google Scholar
Polyakov A.Y., Smirnov N.B., Govorkov A.V., Botchkarev A.E., Nelson N.N., Fahmi M.M.E., Griffin J.A., Khan A., Mohammad S.N., Johnstone D.K., Bublik V.T., Chsherbatchev K.D., Voronova M.I., Kasatochkin V.S., Solid State Electron., 46 (2002), 2155.PolyakovA.Y.SmirnovN.B.GovorkovA.V.BotchkarevA.E.NelsonN.N.FahmiM.M.E.GriffinJ.A.KhanA.MohammadS.N.JohnstoneD.K.BublikV.T.ChsherbatchevK.D.VoronovaM.I.KasatochkinV.S.462002215510.1016/S0038-1101(02)00179-XSearch in Google Scholar
Skowronski M., Mater. Sci. Forum, 83 – 87 (1992), 377.SkowronskiM.83–87199237710.4028/www.scientific.net/MSF.83-87.377Search in Google Scholar
Wohlrab A., Grundig-Wendrock B., Jurisch M., Kiessling F.-M., Niklas J.R., Eur. Phys. J.-Appl. Phys., 27(2004),223.WohlrabA.Grundig-WendrockB.JurischM.KiesslingF.-M.NiklasJ.R.27200422310.1051/epjap:2004148Search in Google Scholar
Reddy C.V., Fung S., Beling C.D., Phys. Rev. B, 54 (1996), 11290.ReddyC.V.FungS.BelingC.D.5419961129010.1103/PhysRevB.54.11290Search in Google Scholar
Bourgoin J.C., von Bardeleben H.J., Stievenard D., J. Appl. Phys., 64 (1988), R65.BourgoinJ.C.von BardelebenH.J.StievenardD.641988R6510.1063/1.341206Search in Google Scholar
Shiraki H., Tokuda Y., Sassa K., J. Appl. Phys., 84 (1998), 3167.ShirakiH.TokudaY.SassaK.841998316710.1063/1.368514Search in Google Scholar
Fang Z.-Q., Schlesinger T.E., Milnes A.G., J. Appl. Phys., 61 (1987), 5047.FangZ.-Q.SchlesingerT.E.MilnesA.G.611987504710.1063/1.338327Search in Google Scholar
KamiŃska M., Weber E.R., EL2 Defect in GaAs, in: Weber E.R. (Ed.), Imperfections in III/V Materials, Semiconductors and Semimetals, Vol. 8, Academic Press, Boston, 1993, p. 59.KamiŃskaM.WeberE.R.EL2 Defect in GaAsWeberE.R.8Academic PressBoston19935910.1016/S0080-8784(08)62798-2Search in Google Scholar