Cite

Geisz J.F., Friedman D.J., Semicond. Sci. Tech., 17 (2002), 769.GeiszJ.F.FriedmanD.J.Semicond. Sci. Tech17200276910.1088/0268-1242/17/8/305Search in Google Scholar

Kurtz S.R., Allerman A.A., Jones E.D., Gee J.M., Banas J.J., HammonS B.E., Appl. Phys. Lett., 74 (1999), 729.KurtzS.R.AllermanA.A.JonesE.D.GeeJ.M.BanasJ.J.HammonSB.E.Appl. Phys.Lett74199972910.1063/1.123105Search in Google Scholar

Kondow M., Uomi K., Niwa A., Kitatani T., Watahiki S., Yazawa Y., Jpn. J. Appl. Phys., 35 (1996), 1273.KondowM.UomiK.NiwaA.KitataniT.WatahikiS.YazawaY.Jpn. J. Appl. Phys351996127310.1143/JJAP.35.1273Search in Google Scholar

Fischer M., Gollub D., Reinhardt M., Kamp M., Forchel A., J. Cryst. Growth, 251 (2003), 353.FischerM.GollubD.ReinhardtM.KampM.ForchelA.J. Cryst. Growth251200335310.1016/S0022-0248(02)02435-1Search in Google Scholar

Ściana B., Zborowska-Lindert I., Pucicki D., BoratyŃski B., Radziewicz D., TŁaczaŁa M., Serafinczuk J., Poloczek P., SĘk G., Misiewicz J., Opto-Electron. Rev., 16 (2008), 1.ŚcianaB.Zborowska-LindertI.PucickiD.BoratyŃskiB.RadziewiczD.TŁaczaŁaM.SerafiŃczukJ.PoloczekP.SĘkG.MisiewiczJ.Opto-Electron. Rev162008110.2478/s11772-007-0034-4Search in Google Scholar

Buyanova I.A., Chen W.M., Tu C.W., J. Phys.- Condens. Mat., 16 (2004), S3027.BuyanovaI.A.ChenW.M.TuC.W.J. Phys.- Condens. Mat162004S302710.1088/0953-8984/16/31/003Search in Google Scholar

Li W., Pessa M., Ahlgren T., Dekker J., Appl. Phys. Lett., 79 (2001), 1094.LiW.PessaM.AhlgrenT.DekkerJ.Appl. Phys. Lett792001109410.1063/1.1396316Search in Google Scholar

Khan A., Kurtz S.R., Prasad S., Johnston S.W., Gou J., Appl. Phys. Lett., 90 (2007), 243509.KhanA.KurtzS.R.PrasadS.JohnstonS.W.GouJ.Appl. Phys. Lett90200724350910.1063/1.2747664Search in Google Scholar

Ściana B., Radziewicz D., Pucicki D., Zborowska-Lindert I., SerafiŃczuk J., TŁaczaŁa M., Latkowska M., KovÁČ J., Srnanek R., Cryst. Res. Technol., 47 (2012), 313.ŚcianaB.RadziewiczD.PucickiD.Zborowska-LindertI.SerafinczukJ.TŁaczaŁaM.LatkowskaM.KovÁČJ.SrnanekR.Cryst. Res. Technol47201231310.1002/crat.201100415Search in Google Scholar

Shan W., Walukiewicz W., Ager III J.W., Haller E., Geisz J.F., Friedman D.J., Olson J.M., Kurtz S.R., Phys. Rev. Lett., 82 (1999), 1221.ShanW.WalukiewiczW.Ager IIIJ.W.HallerE.GeiszJ.F.FriedmanD.J.OlsonJ.M.KurtzS.R.Phys. Rev. Lett821999122110.1103/PhysRevLett.82.1221Search in Google Scholar

Kamyczek P., BiegaŃski P., PŁaczek-Popko E., Zielony E., Gelczuk Ł., Ściana B., Pucicki D., Radziewicz D., TŁaczaŁa M., Kopalko K., DĄbrowska-Szata M., Mater. Sci.-Poland, 31 (2013), 595.KamyczekP.BiegaŃskiP.PŁaczek-PopkoE.ZielonyE.GelczukŁ.ŚcianaB.PucickiD.RadziewiczD.TŁaczaŁaM.KopalkoK.DĄbrowska-SzataM.Mater. Sci.-Poland31201359510.2478/s13536-013-0144-2Search in Google Scholar

Blood P., Orton J.W., Characterization of Semiconductors: Majority Carriers and Electron States, Academic Press, London, 1992.BloodP.OrtonJ.W.Characterization of Semiconductors: Majority Carriers and Electron StatesAcademic PressLondon1992Search in Google Scholar

Johnston S.W., Kurtz S.R., Friedman D.J., Ptak A.J., Ahrenkiel R.K., Crandall R.S., Appl. Phys. Lett., 86 (2005), 072109.JohnstonS.W.KurtzS.R.FriedmanD.J.PtakA.J.AhrenkielR.K.CrandallR.S.Appl. Phys. Lett86200507210910.1063/1.1865328Search in Google Scholar

Tanaka S., Moto A., Takahashi M., Tanabe T., Takagishi S., J. Cryst. Growth, 221 (2000),467.TanakaS.MotoA.TakahashiM.TanabeT.TakagishiS.J. Cryst. Growth221200046710.1016/S0022-0248(00)00746-6Search in Google Scholar

Krispin P., Spruette S.G., Harris J.S., Ploog K. H., J. Appl. Phys., 88 (2000),4153.KrispinP.SpruetteS.G.HarrisJ.S.PloogK. H.J. Appl. Phys882000415310.1063/1.1290449Search in Google Scholar

Bouzazi B., Suzuki H., Kojami N., Ohsita Y., Yamaguchi M.,Physica B, 406 (2011),1070.BouzaziB.SuzukiH.KojamiN.OhsitaY.YamaguchiM.Physica B4062011107010.1016/j.physb.2010.11.086Search in Google Scholar

Geisz J.F., Friedman D.J., Olson J.M., Kurtz S.R., Keyes B.M., J. Cryst. Growth, 195 (1998),401.GeiszJ.F.FriedmanD.J.OlsonJ.M.KurtzS.R.KeyesB.M.J. Cryst. Growth195199840110.1016/S0022-0248(98)00563-6Search in Google Scholar

Moto A., Takahashi M., Takagishi S.,J. Cryst. Growth, 221 (2000),485.MotoA.TakahashiM.TakagishiS.J. Cryst. Growth221200048510.1016/S0022-0248(00)00749-1Search in Google Scholar

Kaplar R.J., Kwon D., Ringel S.A., Allerman A.A., Kurtz S.R., Jones E.D., Sieg R.M., Sol. Energ. Mat. Sol. C., 69 (2001),851.KaplarR.J.KwonD.RingelS.A.AllermanA.A.KurtzS.R.JonesE.D.SiegR.M.Sol. Energ. Mat. Sol. C69200185110.1016/S0927-0248(00)00380-9Search in Google Scholar

Gelczuk Ł., Stokowski H., Dabrowska-Szata M., Kudrawiec R., J. Appl. Phys., 119 (2016),185706.GelczukŁ.StokowskiH.Dabrowska-SzataM.KudrawiecR.J. Appl. Phys119201618570610.1063/1.4949514Search in Google Scholar

Gelczuk Ł., Dabrowska-Szata M., Pucicki D., Acta Phys. Pol. A, 126 (20014), 1195.GelczukŁ.Dabrowska-SzataM.PucickiD.Acta Phys. Pol. A12620014119510.12693/APhysPolA.126.1195Search in Google Scholar

Dobaczewski L., Peaker A.R., Bonde-Nielsen K., J. Appl. Phys., 96 (2004),4689.DobaczewskiL.PeakerA.R.Bonde-NielsenK.J. Appl. Phys962004468910.1063/1.1794897Search in Google Scholar

Zhang S.B., Wei S.-H., Phys. Rev. Lett., 86 (2001), 1789.ZhangS.B.WeiS.-H.Phys. Rev. Lett862001178910.1103/PhysRevLett.86.1789Search in Google Scholar

Spruytte S.G., Coldren C.W., Harris J.S., Wampler W., Krispin P., Ploog K., Larson M.C., J. Appl. Phys., 89 (2001), 4401.SpruytteS.G.ColdrenC.W.HarrisJ.S.WamplerW.KrispinP.PloogK.LarsonM.C.J. Appl. Phys892001440110.1063/1.1352675Search in Google Scholar

Li W., Pessa M., Likonen J., Appl. Phys. Lett., 78 (2001), 2864.LiW.PessaM.LikonenJ.Appl. Phys. Lett782001286410.1063/1.1370549Search in Google Scholar

Krispin P., Gambin V., Harris J.S., Ploog K.H., J. Appl. Phys., 93 (2003), 6095.KrispinP.GambinV.HarrisJ.S.PloogK.H.J. Appl. Phys932003609510.1063/1.1568523Search in Google Scholar

Shafi M., Mari R.H., Henini M., Taylor D., Hopkinson M., Phys. Status Solidi C, 6 (2009), 2652.ShafiM.MariR.H.HeniniM.TaylorD.HopkinsonM.Phys. Status Solidi C62009265210.1002/pssc.200982561Search in Google Scholar

Johnston S.W., Kurtz S.R., J. Vac. Sci. Technol. A, 24 (2006), 1252.JohnstonS.W.KurtzS.R.J. Vac. Sci. Technol. A242006125210.1116/1.2167081Search in Google Scholar

Martin G.M., Mitonneau M., Mircea A., Electron. Lett.,13 (7) (1977), 191.MartinG.M.MitonneauM.MirceaA.Electron. Lett137197719110.1049/el:19770140Search in Google Scholar

Polyakov A.Y., Smirnov N.B., Govorkov A.V., Botchkarev A.E., Nelson N.N., Fahmi M.M.E., Griffin J.A., Khan A., Mohammad S.N., Johnstone D.K., Bublik V.T., Chsherbatchev K.D., Voronova M.I., Kasatochkin V.S., Solid State Electron., 46 (2002), 2155.PolyakovA.Y.SmirnovN.B.GovorkovA.V.BotchkarevA.E.NelsonN.N.FahmiM.M.E.GriffinJ.A.KhanA.MohammadS.N.JohnstoneD.K.BublikV.T.ChsherbatchevK.D.VoronovaM.I.KasatochkinV.S.Solid State Electron462002215510.1016/S0038-1101(02)00179-XSearch in Google Scholar

Skowronski M., Mater. Sci. Forum, 83 – 87 (1992), 377.SkowronskiM.Mater. Sci. Forum83–87199237710.4028/www.scientific.net/MSF.83-87.377Search in Google Scholar

Wohlrab A., Grundig-Wendrock B., Jurisch M., Kiessling F.-M., Niklas J.R., Eur. Phys. J.-Appl. Phys., 27(2004),223.WohlrabA.Grundig-WendrockB.JurischM.KiesslingF.-M.NiklasJ.R.Eur. Phys. J.-Appl. Phys27200422310.1051/epjap:2004148Search in Google Scholar

Reddy C.V., Fung S., Beling C.D., Phys. Rev. B, 54 (1996), 11290.ReddyC.V.FungS.BelingC.D.Phys. Rev. B5419961129010.1103/PhysRevB.54.11290Search in Google Scholar

Bourgoin J.C., von Bardeleben H.J., Stievenard D., J. Appl. Phys., 64 (1988), R65.BourgoinJ.C.von BardelebenH.J.StievenardD.J. Appl. Phys641988R6510.1063/1.341206Search in Google Scholar

Shiraki H., Tokuda Y., Sassa K., J. Appl. Phys., 84 (1998), 3167.ShirakiH.TokudaY.SassaK.J. Appl. Phys841998316710.1063/1.368514Search in Google Scholar

Fang Z.-Q., Schlesinger T.E., Milnes A.G., J. Appl. Phys., 61 (1987), 5047.FangZ.-Q.SchlesingerT.E.MilnesA.G.J. Appl. Phys611987504710.1063/1.338327Search in Google Scholar

KamiŃska M., Weber E.R., EL2 Defect in GaAs, in: Weber E.R. (Ed.), Imperfections in III/V Materials, Semiconductors and Semimetals, Vol. 8, Academic Press, Boston, 1993, p. 59.KamiŃskaM.WeberE.R.EL2 Defect in GaAsWeberE.R.Imperfections in III/V Materials, Semiconductors and Semimetals8Academic PressBoston19935910.1016/S0080-8784(08)62798-2Search in Google Scholar

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