<abstract xmlns="http://www.w3.org/1999/xhtml"><p>Due to the particular advantages of amorphous silicon or its alloys with carbon in comparison to conventional crystalline materials makes such a material still interesting for study. The amorphous silicon carbide may be used in a number of micro-mechanical and micro-electronics applications and also for photovoltaic energy conversion devices. Boron doped thin layers of amorphous silicon carbide, presented in this paper, were prepared due to the optimization process for preparation of heterojunction solar cell structure. DC and AC measurement and subsequent evaluation were carried out in order to comprehensively assess the electrical transport processes in the prepared a-SiC/c-Si structures. We have investigated the influence of methane content in deposition gas mixture and different electrode configuration.</p></abstract>

Due to the particular advantages of amorphous silicon or its alloys with carbon in comparison to conventional crystalline materials makes such a material still interesting for study. The amorphous silicon carbide may be used in a number of micro-mechanical and micro-electronics applications and also for photovoltaic energy conversion devices. Boron doped thin layers of amorphous silicon carbide, presented in this paper, were prepared due to the optimization process for preparation of heterojunction solar cell structure. DC and AC measurement and subsequent evaluation were carried out in order to comprehensively assess the electrical transport processes in the prepared a-SiC/c-Si structures. We have investigated the influence of methane content in deposition gas mixture and different electrode configuration.

Electric measurements of PV heterojunction structures a-SiC/c-Si

Faculty of Electrical Engineering and Information Technologies

Slovak Academy of Sciences, Institute of Electrical Engineering

Journal of Electrical Engineering

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

{"article-title":"Electric measurements of PV heterojunction structures a-SiC/c-Si"}

Due to the particular advantages of amorphous silicon or its alloys with carbon in comparison to conventional crystalline materials makes such a material still...

Electric measurements of PV heterojunction structures a-SiC/c-Si

Publicado en línea: 07 mar 2018

Páginas: 52 - 57

Recibido: 05 nov 2017

DOI: https://doi.org/10.1515/jee-2018-0007

Palabras clave
amorphous silicon carbide, thin films, solar cell, impedance spectroscopy, equivalent circuit

© 2018 Milan Perný et al., published by De Gruyter Open

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

Electric measurements of PV heterojunction structures a-SiC/c-Si

Publicado en línea: 07 mar 2018

Páginas: 52 - 57

Recibido: 05 nov 2017

DOI: https://doi.org/10.1515/jee-2018-0007

Palabras claveamorphous silicon carbide, thin films, solar cell, impedance spectroscopy, equivalent circuit

© 2018 Milan Perný et al., published by De Gruyter Open

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

Palabras clave
amorphous silicon carbide, thin films, solar cell, impedance spectroscopy, equivalent circuit