<abstract xmlns="http://www.w3.org/1999/xhtml"><p>We have developed a technology for fabrication of black − Si by use of the surface structure chemical transfer (SSCT) method. The ultralow reflectance below 3% results from formation of a graded porosity structure of a nanocrystalline Si layer formed by the SSCT method. The nanocrystalline Si layer with an extremely large surface area is effectively passivated by deposition of phosphosilicate glass (PSG) followed by heat treatment at 925 ◦C. After PSG passivation, the minority carrier lifetime greatly increases, and the internal quantum efficiency in the short wavelength region is also greatly increased. Using the SSCT method and the PSG passivation method, the high conversion efficiency of 19.7% is achieved.</p></abstract>

We have developed a technology for fabrication of black − Si by use of the surface structure chemical transfer (SSCT) method. The ultralow reflectance below 3% results from formation of a graded porosity structure of a nanocrystalline Si layer formed by the SSCT method. The nanocrystalline Si layer with an extremely large surface area is effectively passivated by deposition of phosphosilicate glass (PSG) followed by heat treatment at 925 ◦C. After PSG passivation, the minority carrier lifetime greatly increases, and the internal quantum efficiency in the short wavelength region is also greatly increased. Using the SSCT method and the PSG passivation method, the high conversion efficiency of 19.7% is achieved.

High conversion efficiency of crystalline Si solar cells using black − Si fabricated by SSCT method

Institute of Scientific and Industrial Research

Journal of Electrical Engineering

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

We have developed a technology for fabrication of black − Si by use of the surface structure chemical transfer (SSCT) method. The ultralow reflectance below 3%...

High conversion efficiency of crystalline Si solar cells using black − Si fabricated by SSCT method

Publicado en línea: 29 dic 2017

Páginas: 37 - 42

Recibido: 23 abr 2017

DOI: https://doi.org/10.1515/jee-2017-0053

Palabras clave
surface structure chemical transfer, black Si, Si solar cells, surface passivation, reflectance, phosphosilicate glass

© 2017 Kentaro Imamura et al., published by De Gruyter Open

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

High conversion efficiency of crystalline Si solar cells using black − Si fabricated by SSCT method

Publicado en línea: 29 dic 2017

Páginas: 37 - 42

Recibido: 23 abr 2017

DOI: https://doi.org/10.1515/jee-2017-0053

Palabras clavesurface structure chemical transfer, black Si, Si solar cells, surface passivation, reflectance, phosphosilicate glass

© 2017 Kentaro Imamura et al., published by De Gruyter Open

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

Palabras clave
surface structure chemical transfer, black Si, Si solar cells, surface passivation, reflectance, phosphosilicate glass