<abstract xmlns="http://www.w3.org/1999/xhtml"> Photo sensitive polymer SU-8, owing to its excellent mechanical properties and dielectric properties on polymerization, is widely used in MEMS device fabrications. However, the removing, stripping or re-patterning of the cross-linked SU-8 is a difficult issue. In this paper, CF4/O2 gas mixture provided by a plasma asher equipment was used for the patterning of cross-linked SU-8 material. The RF power, the temperature of the substrate holder, chamber pressure and gas concentration were optimized for the cross-linked SU-8 etching process. When the CF4/O2 mixture contains about 5%CF4 by volume, the etching rate can be reached at 5.2 μm/min.</abstract>

Photo sensitive polymer SU-8, owing to its excellent mechanical properties and dielectric properties on polymerization, is widely used in MEMS device fabrications. However, the removing, stripping or re-patterning of the cross-linked SU-8 is a difficult issue. In this paper, CF4/O2 gas mixture provided by a plasma asher equipment was used for the patterning of cross-linked SU-8 material. The RF power, the temperature of the substrate holder, chamber pressure and gas concentration were optimized for the cross-linked SU-8 etching process. When the CF4/O2 mixture contains about 5%CF4 by volume, the etching rate can be reached at 5.2 μm/min.

A New Dry Etching Method with the High Etching Rate for Patterning Cross–Linked SU–8 Thick Films

Key Laboratory for Micro/Nano Technology and Systems of Liaoning Province, Dalian University of Technology, Dalian 116024, China

Key Laboratory for Precision and Non-traditional Machining Technology of Ministry of Education, Dalian University of Technology, Dalian 116024, PR China

Journal of Electrical Engineering

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

Photo sensitive polymer SU-8, owing to its excellent mechanical properties and dielectric properties on polymerization, is widely used in MEMS device...

A New Dry Etching Method with the High Etching Rate for Patterning Cross–Linked SU–8 Thick Films

Publicado en línea: 28 jun 2016

Páginas: 212 - 216

Recibido: 12 feb 2016

DOI: https://doi.org/10.1515/jee-2016-0030

Palabras clave
dry etching, plasma, SU-8 photoresist, etching rate

© Faculty of Electrical Engineering and Information Technology, Slovak University of Technology

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

A New Dry Etching Method with the High Etching Rate for Patterning Cross–Linked SU–8 Thick Films

Publicado en línea: 28 jun 2016

Páginas: 212 - 216

Recibido: 12 feb 2016

DOI: https://doi.org/10.1515/jee-2016-0030

Palabras clavedry etching, plasma, SU-8 photoresist, etching rate

© Faculty of Electrical Engineering and Information Technology, Slovak University of Technology

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

Palabras clave
dry etching, plasma, SU-8 photoresist, etching rate