<abstract xml:lang="en" xmlns="http://www.w3.org/1999/xhtml">The films of GdScO3 were prepared by liquid injection metal-organic chemical vapor deposition, MOCVD at 600 °C on (100) Si substrate. The as-deposited films were amorphous with a smooth surface and sharp GdScO3/Si interface. X-ray diffraction showed that the amorphous phase is well preserved upon rapid thermal annealing up to 1000 °C. It is shown, that exact stoichiometry of GdScO3 is not necessary to achieve dielectric constant above 20.</abstract>

The films of GdScO3 were prepared by liquid injection metal-organic chemical vapor deposition, MOCVD at 600 °C on (100) Si substrate. The as-deposited films were amorphous with a smooth surface and sharp GdScO3/Si interface. X-ray diffraction showed that the amorphous phase is well preserved upon rapid thermal annealing up to 1000 °C. It is shown, that exact stoichiometry of GdScO3 is not necessary to achieve dielectric constant above 20.

Gadolinium Scandate: Next Candidate for Alternative Gate Dielectric in CMOS Technology?

Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9, 841 04 Bratislava

Institute of Informatics, Institute of Measurement Science, Slovak Academy of Sciences, Dúbravská cesta 9, 841 04 Bratislava

Slovak Academy of Sciences, Dúbravská cesta 9, 841 04 Bratislava

Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Ilkovičova 3, 812 19 Bratislava, Slovakia

Journal of Electrical Engineering

The films of GdScO3 were prepared by liquid injection metal-organic chemical vapor deposition, MOCVD at 600 °C on (100) Si substrate. The as-deposited films...

Gadolinium Scandate: Next Candidate for Alternative Gate Dielectric in CMOS Technology?

Online veröffentlicht: 07. Juni 2011

Seitenbereich: 54 - 56

DOI: https://doi.org/10.2478/v10187-011-0009-z

Schlüsselwörter
CMOS technology, gate dielectric, high-κ, X-ray diffraction, X-ray reflectivity

This content is open access.

Gadolinium Scandate: Next Candidate for Alternative Gate Dielectric in CMOS Technology?

Online veröffentlicht: 07. Juni 2011

Seitenbereich: 54 - 56

DOI: https://doi.org/10.2478/v10187-011-0009-z

SchlüsselwörterCMOS technology, gate dielectric, high-κ, X-ray diffraction, X-ray reflectivity

This content is open access.

Schlüsselwörter
CMOS technology, gate dielectric, high-κ, X-ray diffraction, X-ray reflectivity