<abstract xml:lang="en" xmlns="http://www.w3.org/1999/xhtml">The paper is focused on the development of an <italic>in situ</italic> real-time method for studying the process of wet chemical etching of thin films. The results of studies demonstrate the adequate etching selectivity for all thin film SbxSe100-x (x = 0, 20, 40, 50, 100) compositions under consideration. Different etching rates for the as-deposited and laser exposed areas were found to depend on the sample composition. The highest achieved etching rate was 1.8 nm/s for Sb40Se60 samples.</abstract>

The paper is focused on the development of an in situ real-time method for studying the process of wet chemical etching of thin films. The results of studies demonstrate the adequate etching selectivity for all thin film SbxSe100-x (x = 0, 20, 40, 50, 100) compositions under consideration. Different etching rates for the as-deposited and laser exposed areas were found to depend on the sample composition. The highest achieved etching rate was 1.8 nm/s for Sb40Se60 samples.

Selective Wet-Etching of Amorphous/Crystallized Sb-Se Thin Films

Innovative Microscopy Center, Daugavpils University, 1 Parades Str., Daugavpils, LV-5400, LATVIA

Latvian Journal of Physics and Technical Sciences

{"article-title":"Selective Wet-Etching of Amorphous/Crystallized Sb-Se Thin Films"}

The paper is focused on the development of an in situ real-time method for studying the process of wet chemical etching of thin films. The results of studies...

Selective Wet-Etching of Amorphous/Crystallized Sb-Se Thin Films

Online veröffentlicht: 18. Mai 2012

Seitenbereich: 45 - 50

DOI: https://doi.org/10.2478/v10047-012-0010-8

Schlüsselwörter
chalcogenide thin film, amorphous and crystalline phases, etching rate

This content is open access.

Selective Wet-Etching of Amorphous/Crystallized Sb-Se Thin Films

Online veröffentlicht: 18. Mai 2012

Seitenbereich: 45 - 50

DOI: https://doi.org/10.2478/v10047-012-0010-8

Schlüsselwörterchalcogenide thin film, amorphous and crystalline phases, etching rate

This content is open access.

Schlüsselwörter
chalcogenide thin film, amorphous and crystalline phases, etching rate