<abstract xml:lang="en" xmlns="http://www.w3.org/1999/xhtml"><p>Rare earth Eu3+-doped MgNb2O6 red-emitting phosphor was prepared by solid-state reaction. Structure and photoluminescence properties of the samples were characterized by X-ray diffraction (XRD), scan electron microscopy (SEM) and fluorescence spectrophotometer. Meanwhile, the effect of the co-activator Bi3+ on the PL of the MgNb2O6:Eu3+ phosphor was studied. The results showed that the pure phase of MgNb2O6 could be available after firing at 1200 °C. The Mg1−x
                        Nb2O6:Eux3+ phosphors could be effectively excited by the UV irradiation (273 nm) and emit red light at 615 nm due to the forced electric dipole 5
                        D
                        0 → 7
                        F
                        2 transitions on Eu3+, which indicated that Eu3+ occupied the non-inversion symmetry sites in the MgNb2O6 host lattice. So, the addition of the co-activator Bi3+ not only increased the excitation band of the MgNb2O6:Eu3+ phosphor at about 330 nm, but also strengthened the PL intensity at 615 nm. Therefore, MgNb2O6:Eu3+, Bi3+ might find application to InGaN chip-based white light emitting diodes.</p></abstract>

Rare earth Eu3+-doped MgNb2O6 red-emitting phosphor was prepared by solid-state reaction. Structure and photoluminescence properties of the samples were characterized by X-ray diffraction (XRD), scan electron microscopy (SEM) and fluorescence spectrophotometer. Meanwhile, the effect of the co-activator Bi3+ on the PL of the MgNb2O6:Eu3+ phosphor was studied. The results showed that the pure phase of MgNb2O6 could be available after firing at 1200 °C. The Mg1−x
                        Nb2O6:Eux3+ phosphors could be effectively excited by the UV irradiation (273 nm) and emit red light at 615 nm due to the forced electric dipole 5
                        D
                        0 → 7
                        F
                        2 transitions on Eu3+, which indicated that Eu3+ occupied the non-inversion symmetry sites in the MgNb2O6 host lattice. So, the addition of the co-activator Bi3+ not only increased the excitation band of the MgNb2O6:Eu3+ phosphor at about 330 nm, but also strengthened the PL intensity at 615 nm. Therefore, MgNb2O6:Eu3+, Bi3+ might find application to InGaN chip-based white light emitting diodes.

Preparation and photoluminescence properties of MgNb2O6:Eu3+, Bi3+ red-emitting phosphor

School of Chemistry and Chemical Engineering, Guangxi University, Nanning, 530004, China

Materials Science-Poland

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Rare earth Eu3+-doped MgNb2O6 red-emitting phosphor was prepared by solid-state reaction. Structure and photoluminescence properties of the samples were...

Preparation and photoluminescence properties of MgNb2O6:Eu3+, Bi3+ red-emitting phosphor

Online veröffentlicht: 26. März 2014

Seitenbereich: 88 - 92

DOI: https://doi.org/10.2478/s13536-013-0157-x

Schlüsselwörter
luminescence, phosphor, solid-state reaction

© 2014 Wroclaw University of Technology

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Preparation and photoluminescence properties of MgNb2O6:Eu3+, Bi3+ red-emitting phosphor

Online veröffentlicht: 26. März 2014

Seitenbereich: 88 - 92

DOI: https://doi.org/10.2478/s13536-013-0157-x

Schlüsselwörterluminescence, phosphor, solid-state reaction

© 2014 Wroclaw University of Technology

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Schlüsselwörter
luminescence, phosphor, solid-state reaction