<abstract xml:lang="en" xmlns="http://www.w3.org/1999/xhtml"><p>Interfacial reactions between Ti/Al/Ni/Au metallization and GaN(cap)/AlGaN/GaN heterostructures at various annealing temperatures ranging from 715 to 865 °C were studied. Electrical current-voltage (I–V) characteristics, van der Pauw Hall mobility measurements and surface topography measurement with atomic force microscopy (AFM) were performed. The ohmic metallizations were annealed at various temperatures in a rapid thermal annealing system and the annealing time of 60 seconds was kept for all samples. To study the influence of the parameters of annealing process on the properties of the 2 dimensional electron gas (2DEG) the van der Pauw Hall mobility measurement was used. Interfacial reactions between the contact metals and heterostructures were analyzed through depth profiles of secondary ion mass spectroscopy. It was observed that transition from nonlinear to linear I-V behavior occurred after the annealing at 805 °C. For the studied samples, the most promising results were obtained for the annealing temperature of 805 °C. This temperatue ensured not only low contact resistance but also made possible to preserve the 2DEG.</p></abstract>

Interfacial reactions between Ti/Al/Ni/Au metallization and GaN(cap)/AlGaN/GaN heterostructures at various annealing temperatures ranging from 715 to 865 °C were studied. Electrical current-voltage (I–V) characteristics, van der Pauw Hall mobility measurements and surface topography measurement with atomic force microscopy (AFM) were performed. The ohmic metallizations were annealed at various temperatures in a rapid thermal annealing system and the annealing time of 60 seconds was kept for all samples. To study the influence of the parameters of annealing process on the properties of the 2 dimensional electron gas (2DEG) the van der Pauw Hall mobility measurement was used. Interfacial reactions between the contact metals and heterostructures were analyzed through depth profiles of secondary ion mass spectroscopy. It was observed that transition from nonlinear to linear I-V behavior occurred after the annealing at 805 °C. For the studied samples, the most promising results were obtained for the annealing temperature of 805 °C. This temperatue ensured not only low contact resistance but also made possible to preserve the 2DEG.

Influence of thermal treatment on the formation of ohmic contacts based on Ti/Al/Ni/Au metallization to n-type AlGaN/GaN heterostructures

Faculty of Microsystem Electronics and Photonics, Wroclaw University of Technology, 11/17 Janiszewskiego Street, 50-372, Wroclaw, Poland

International Laser Centre, Ilkovicova 3, 841 04, Bratislava, Slovakia

Institute of Electronics and Photonics, FEI STU, Ilkovicova 3, 812 19, Bratislava, Slovakia

Materials Science-Poland

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Interfacial reactions between Ti/Al/Ni/Au metallization and GaN(cap)/AlGaN/GaN heterostructures at various annealing temperatures ranging from 715 to 865 °C...

Influence of thermal treatment on the formation of ohmic contacts based on Ti/Al/Ni/Au metallization to n-type AlGaN/GaN heterostructures

Online veröffentlicht: 14. Dez. 2012

Seitenbereich: 342 - 347

DOI: https://doi.org/10.2478/s13536-012-0051-y

Schlüsselwörter
ohmic contact, AlGaN/GaN heterostructure, 2-dimensional electron gas (2DEG)

© 2012 Wroclaw University of Technology

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Influence of thermal treatment on the formation of ohmic contacts based on Ti/Al/Ni/Au metallization to n-type AlGaN/GaN heterostructures

Online veröffentlicht: 14. Dez. 2012

Seitenbereich: 342 - 347

DOI: https://doi.org/10.2478/s13536-012-0051-y

Schlüsselwörterohmic contact, AlGaN/GaN heterostructure, 2-dimensional electron gas (2DEG)

© 2012 Wroclaw University of Technology

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Schlüsselwörter
ohmic contact, AlGaN/GaN heterostructure, 2-dimensional electron gas (2DEG)