<abstract xml:lang="en" xmlns="http://www.w3.org/1999/xhtml"><p>A mechanism of carriers transport through metal-semiconductor interface created by nickel or titanium-based ohmic contacts on Si-face n-type 4H-SiC is presented herein. The mechanism was observed within the temperature range of 20 °C ÷ 300 °C which are typical for devices operating at high current density and at poor cooling conditions. It was found that carriers transport depends strongly on concentration of dopants in the epitaxial layer. The carriers transport has thermionic emission nature for low dopant concentration of 5×1016 cm−3. The thermionic emission was identified for moderate dopant concentration of 5×1017 cm−3 at temperatures higher than 200 °C. Below 200 °C, the field emission dominates (for the same doping level of 5×1017 cm−3). High dopant concentration of 5×1018 cm−3 leads to almost pure field emission transport within the whole investigated temperature range.</p></abstract>

A mechanism of carriers transport through metal-semiconductor interface created by nickel or titanium-based ohmic contacts on Si-face n-type 4H-SiC is presented herein. The mechanism was observed within the temperature range of 20 °C ÷ 300 °C which are typical for devices operating at high current density and at poor cooling conditions. It was found that carriers transport depends strongly on concentration of dopants in the epitaxial layer. The carriers transport has thermionic emission nature for low dopant concentration of 5×1016 cm−3. The thermionic emission was identified for moderate dopant concentration of 5×1017 cm−3 at temperatures higher than 200 °C. Below 200 °C, the field emission dominates (for the same doping level of 5×1017 cm−3). High dopant concentration of 5×1018 cm−3 leads to almost pure field emission transport within the whole investigated temperature range.

Mechanisms of carriers transport in Ni/n-SiC, Ti/n-SiC ohmic contacts

Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, ul. Koszykowa 75, 00-662, Warszawa, Poland

Institute of Electron Technology, Al. Lotników 32/46, 02-668, Warszawa, Poland

Institute of Physics, Polish Academy of Science, Al. Lotników 32/46, 02-668, Warszawa, Poland

Materials Science-Poland

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

{"article-title":"Mechanisms of carriers transport in Ni/n-SiC, Ti/n-SiC ohmic contacts"}

A mechanism of carriers transport through metal-semiconductor interface created by nickel or titanium-based ohmic contacts on Si-face n-type 4H-SiC is...

Mechanisms of carriers transport in Ni/n-SiC, Ti/n-SiC ohmic contacts

Online veröffentlicht: 29. Feb. 2012

Seitenbereich: 233 - 240

DOI: https://doi.org/10.2478/s13536-011-0036-2

Schlüsselwörter
SiC, ohmic contact, carrier transport, silicide, carbide

© 2011 Wroclaw University of Technology

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Mechanisms of carriers transport in Ni/n-SiC, Ti/n-SiC ohmic contacts

Online veröffentlicht: 29. Feb. 2012

Seitenbereich: 233 - 240

DOI: https://doi.org/10.2478/s13536-011-0036-2

SchlüsselwörterSiC, ohmic contact, carrier transport, silicide, carbide

© 2011 Wroclaw University of Technology

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Schlüsselwörter
SiC, ohmic contact, carrier transport, silicide, carbide