Uneingeschränkter Zugang

Microwave dielectric properties of BiFeO3 multiferoic films deposited on conductive layers


Zitieren

[1] Fiebig M., J. Phys. D, 38 (2005). R123. http://dx.doi.org/10.1088/0022-3727/38/8/R0110.1088/0022-3727/38/8/R01Search in Google Scholar

[2] Smolenskii G.A., Chupis I.E., Sov. Phys. Usp., 25 (1982), 475. http://dx.doi.org/10.1070/PU1982v025n07ABEH00457010.1070/PU1982v025n07ABEH004570Search in Google Scholar

[3] Wang J., Neaton J.B., Zheng H., Nagarajan V., Ogale S.B., Liu B., Vehland D., Vaithyanathan V., Schlom D.G., Waghmare U.V., Spaldin N.A., Rabe K.M., Wuttig M., Ramesh R., Science, 299 (2003), 1719. http://dx.doi.org/10.1126/science.108061510.1126/science.108061512637741Search in Google Scholar

[4] Yuan G. L., Ora S. W., Liu J. M., Liu Z.G., Appl. Phys. Lett., 89 (2006), 052905. http://dx.doi.org/10.1063/1.226699210.1063/1.2266992Search in Google Scholar

[5] Yu B., Li M., Liu J., Guo D., Pei L., Zhao X., J. Appl. Phys., 41 (2008), 06503. 10.1088/0022-3727/41/6/065003Search in Google Scholar

[6] Takahashi K., Kida N., Tonouchi M., Phys. Rev. Lett., 96 (2006), 117402. http://dx.doi.org/10.1103/PhysRevLett.96.11740210.1103/PhysRevLett.96.11740216605869Search in Google Scholar

[7] Chen J.-C., Wu J.-M., Appl. Phys. Lett., 91 (2007), 182903. http://dx.doi.org/10.1063/1.279825610.1063/1.2798256Search in Google Scholar

[8] Zhang X-Y., Song Q., Xu F., Ong C.K., Appl. Phys. Lett., 94 (2009), 022907. http://dx.doi.org/10.1063/1.306285710.1063/1.3062857Search in Google Scholar

[9] Kamba S., Nuzhnyy D., Savinov M., Šebek J., Petzelt J., Prokleška J., Haumont R., Phys. Rev. B., 75 (2007), 024403. http://dx.doi.org/10.1103/PhysRevB.75.02440310.1103/PhysRevB.75.024403Search in Google Scholar

[10] Qi X., Dho J., Tomov R., Blamire M.G., Macmanus- Driscol J.L., Appl. Phys.Lett., 86 (2005), 062903. http://dx.doi.org/10.1063/1.186233610.1063/1.1862336Search in Google Scholar

[11] Ma Z., Becker A.J., Polakos P., Huggins H., Pastalan J., Wu H., Watts K., Wong Y.H., Mankiewich P., IEEE Trans. Electron Devices, 45 (1998), 1811. http://dx.doi.org/10.1109/16.66122910.1109/16.661229Search in Google Scholar

[12] Sobiestianskas R., Vengalis B., Banys J., Proc. IEEE 18th Intl. Symp. Applications of Ferroelectrics ISAF 2009, Xian, China, 2009, p.232. Search in Google Scholar

[13] Lancaster M.J., Powell J., Porch A., Supercond. Sci. Technol., 11 (1998), 1323. http://dx.doi.org/10.1088/0953-2048/11/11/02110.1088/0953-2048/11/11/021Search in Google Scholar

[14] Krainik N.N., Khuchua N.P., Zhdanova V.V., Evseev V.A., Sov. Phys. Solid State, 8 (1966), 654. Search in Google Scholar

eISSN:
2083-124X
ISSN:
2083-1331
Sprache:
Englisch
Zeitrahmen der Veröffentlichung:
4 Hefte pro Jahr
Fachgebiete der Zeitschrift:
Materialwissenschaft, andere, Nanomaterialien, Funktionelle und Intelligente Materialien, Charakterisierung und Eigenschaften von Materialien