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Time-dependent gate breakdown reliability and gate leakage improvements in p-GaN MOS-HEMTs using Al2O3 gate dielectric

Tsung-I Liao

Tsung-I Liao

Program on Semiconductor Manufacturing Technology, Academy of Innovative Semiconductor and Sustainable Manufacturing, National Cheng Kung UniversityTainan City, Taiwan
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Liao, Tsung-I
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Sheng-Po Chang

Sheng-Po Chang

Department of Microelectronics Engineering, National Kaohsiung University of Science and TechnologyKaohsiung City 81157, Taiwan
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Chang, Sheng-Po
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Shoou-Jinn Chang

Shoou-Jinn Chang

Institute of Microelectronics & Department of Electrical Engineering, National Cheng Kung UniversityTainan City, Taiwan
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Chang, Shoou-Jinn
  
30. Juni 2025
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Artikel-Kategorie: Research Article
Online veröffentlicht: 30. Juni 2025
Seitenbereich: 143 - 152
Eingereicht: 11. Juni 2025
Akzeptiert: 04. Aug. 2025
DOI: https://doi.org/10.2478/msp-2025-0025
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© 2025 Tsung-I Liao, published by Sciendo
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Figure 1

Schematic cross-sectional structure of the (a) p-GaN gate HEMT with ohmic gate contact and (b) the MOS-HEMT.
Schematic cross-sectional structure of the (a) p-GaN gate HEMT with ohmic gate contact and (b) the MOS-HEMT.

Figure 2

Cross-sectional TEM image of an over-etched substrate (containing oxidized [white]) and residual [light gray] AlGaN) by selective etching between p-GaN and AlGaN (top) and element distribution in the over-etched substrate generated from the EDS line scan (bottom).
Cross-sectional TEM image of an over-etched substrate (containing oxidized [white]) and residual [light gray] AlGaN) by selective etching between p-GaN and AlGaN (top) and element distribution in the over-etched substrate generated from the EDS line scan (bottom).

Figure 3

TLM results of (a) the p-GaN gate HEMT with ohmic gate contact and the MOS-HEMTs (b) before and (c) after PDA treatment.
TLM results of (a) the p-GaN gate HEMT with ohmic gate contact and the MOS-HEMTs (b) before and (c) after PDA treatment.

Figure 4

(a) Transfer characteristics of the HEMT with ohmic gate contact in linear scale: the left Y-axis shows the drain current, and the right Y-axis shows the transconductance. (b) Transfer characteristics in logarithmic scale: the left Y-axis shows the drain current, and the right Y-axis shows the gate leakage current. (c) Output characteristics of the device under different gate voltages.
(a) Transfer characteristics of the HEMT with ohmic gate contact in linear scale: the left Y-axis shows the drain current, and the right Y-axis shows the transconductance. (b) Transfer characteristics in logarithmic scale: the left Y-axis shows the drain current, and the right Y-axis shows the gate leakage current. (c) Output characteristics of the device under different gate voltages.

Figure 5

(a) Comparison of transfer characteristics among the three types of HEMTs in a log scale and (b) in a linear scale.
(a) Comparison of transfer characteristics among the three types of HEMTs in a log scale and (b) in a linear scale.

Figure 6

Comparison of I G–V G characteristics among the three types of HEMTs.
Comparison of I G–V G characteristics among the three types of HEMTs.

Figure 7

TDGB of MOS-HEMTs without (a) and with (d) PDA, Weibull plots of MOS-HEMTs without (b) and with (e) PDA, and lifetime predictions of MOS-HEMTs without (c) and with (f) PDA.
TDGB of MOS-HEMTs without (a) and with (d) PDA, Weibull plots of MOS-HEMTs without (b) and with (e) PDA, and lifetime predictions of MOS-HEMTs without (c) and with (f) PDA.

Comparison of switching performance parameters with other E-mode GaN-based devices_

References I ON /I OFF SS (mV/dec) V th (V)
This work (w/PDA) 109 71.26 1.05
[19] 105 — 2.40
[28] 109 116 0.70
[29] 106 — 0.50
[30] 109 95 0.30
[31] 104 205 0.49
[32] 108 — 1.10

Comparison of typical performance parameters among the three types of HEMTs_

Parameters Ohmic gate MOS-HEMT (w/o PDA) MOS-HEMT (w/PDA)
V th (V) 0.81 1.15 1.05
SS (mV/dec) 75.61 89.79 71.26
g m,max (mS/mm) 76.64 40.33 18.33
Field effect mobility (cm2/V s) 684 153 71.4
I ON /I OFF 2.17 × 1011 2.48 × 108 5.64 × 109
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