<abstract xmlns="http://www.w3.org/1999/xhtml">In the present paper, using of SILVACO-TCAD numerical simulator for studying the enhancement in Pt/n-GaN Schottky diode current–voltage (I-V) characteristics by introduction of a layer of hafnium dioxide (HfO2) (with a thickness e = 5 nm) between the Pt contact and semiconductor interface of GaN is reported. The simulation of I-V characteristics of Pt/n-GaN was done at a temperature of 300 K. However, the simulation of Pt/HfO2/n-GaN structure was performed in a temperature range of 270 – 390 K at steps of 30 K. The electrical parameters: barrier height (Φb), ideality factor and series resistance have been calculated using different methods: conventional I-V, Norde, Cheung, Chattopadhyay and Mikhelashvili. Statistical analysis showed that the metal-insulator-semiconductor (Pt/HfO2/n-GaN) structure has a barrier height of 0.79 eV which is higher compared with the (Pt/n-GaN) structure (0.56 eV). The parameters of modified Richardson <inline-formula><alternatives><math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mrow><mo>(</mo><mrow><mo>(</mo><mrow><mo>ln</mo><mrow><mo>(</mo><mrow><mfrac><mrow><msub><mrow><mtext>I</mtext></mrow><mn>0</mn></msub></mrow><mrow><msup><mrow><mtext>T</mtext></mrow><mtext>2</mtext></msup></mrow></mfrac></mrow><mo>)</mo></mrow><mo>-</mo><mrow><mo>(</mo><mrow><mfrac><mrow><msup><mrow><mtext>q</mtext></mrow><mn>2</mn></msup><msubsup><mrow><mi>σ</mi></mrow><mrow><mtext>s</mtext><mn>0</mn></mrow><mn>2</mn></msubsup></mrow><mrow><mn>2</mn><msup><mrow><mrow><mtext>kT</mtext></mrow></mrow><mn>2</mn></msup></mrow></mfrac></mrow><mo>)</mo></mrow><mo>=</mo><mo>ln</mo><mrow><mo>(</mo><mrow><mtext>AA</mtext><mo>*</mo></mrow><mo>)</mo></mrow><mo>-</mo><mfrac><mrow><mtext>q</mtext><msub><mrow><mo>∅</mo></mrow><mrow><mtext>B</mtext><mn>0</mn></mrow></msub></mrow><mrow><mtext>kT</mtext></mrow></mfrac></mrow><mo>)</mo></mrow></mrow></math><tex-math>(\left( {\ln \left( {{{{{\rm{I}}_0}} \over {{{\rm{T}}^{\rm{2}}}}}} \right) - \left( {{{{{\rm{q}}^2}\sigma _{{\rm{s}}0}^2} \over {2{\rm{k}}{{\rm{T}}^2}}}} \right) = \ln \left( {{\rm{AA*}}} \right) - {{{\rm{q}}{\emptyset _{{\rm{B}}0}}} \over {{\rm{kT}}}}} \right)</tex-math></alternatives></inline-formula> equation versus (<inline-formula><alternatives><math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mrow><mfrac><mn>1</mn><mrow><mtext>kT</mtext></mrow></mfrac></mrow></math><tex-math>{1 \over {{\rm{kT}}}}</tex-math></alternatives></inline-formula>) have been extracted using the mentioned methods. The following values: <inline-formula><alternatives><math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mrow><msubsup><mrow><mtext>A</mtext></mrow><mrow><mtext>Simul</mtext></mrow><mo>*</mo></msubsup><mo>=</mo><mn>22.65</mn><mi> </mi><msup><mrow><mrow><mtext>A</mtext><mo>/</mo><mtext>cm</mtext></mrow></mrow><mtext>2</mtext></msup><mo>⋅</mo><msup><mrow><mtext>K</mtext></mrow><mn>2</mn></msup></mrow></math><tex-math>{\rm{A}}_{{\rm{Simul}}}^* = 22.65\,{\rm{A/c}}{{\rm{m}}^{\rm{2}}} \cdot {{\rm{K}}^2}</tex-math></alternatives></inline-formula>, 14.29 A/cm2 K2, 25.53 A/cm2 K2 and 21.75 A/cm2 K2 were found. The Chattopadhyay method occurred the best method for estimation the theoretical values of Richardson constant.</abstract>

In the present paper, using of SILVACO-TCAD numerical simulator for studying the enhancement in Pt/n-GaN Schottky diode current–voltage (I-V) characteristics by introduction of a layer of hafnium dioxide (HfO2) (with a thickness e = 5 nm) between the Pt contact and semiconductor interface of GaN is reported. The simulation of I-V characteristics of Pt/n-GaN was done at a temperature of 300 K. However, the simulation of Pt/HfO2/n-GaN structure was performed in a temperature range of 270 – 390 K at steps of 30 K. The electrical parameters: barrier height (Φb), ideality factor and series resistance have been calculated using different methods: conventional I-V, Norde, Cheung, Chattopadhyay and Mikhelashvili. Statistical analysis showed that the metal-insulator-semiconductor (Pt/HfO2/n-GaN) structure has a barrier height of 0.79 eV which is higher compared with the (Pt/n-GaN) structure (0.56 eV). The parameters of modified Richardson ((ln(I0T2)-(q2σs022kT2)=ln(AA*)-q∅B0kT)(\left( {\ln \left( {{{{{\rm{I}}_0}} \over {{{\rm{T}}^{\rm{2}}}}}} \right) - \left( {{{{{\rm{q}}^2}\sigma _{{\rm{s}}0}^2} \over {2{\rm{k}}{{\rm{T}}^2}}}} \right) = \ln \left( {{\rm{AA*}}} \right) - {{{\rm{q}}{\emptyset _{{\rm{B}}0}}} \over {{\rm{kT}}}}} \right) equation versus (1kT{1 \over {{\rm{kT}}}}) have been extracted using the mentioned methods. The following values: ASimul*=22.65 A/cm2⋅K2{\rm{A}}_{{\rm{Simul}}}^* = 22.65\,{\rm{A/c}}{{\rm{m}}^{\rm{2}}} \cdot {{\rm{K}}^2}, 14.29 A/cm2 K2, 25.53 A/cm2 K2 and 21.75 A/cm2 K2 were found. The Chattopadhyay method occurred the best method for estimation the theoretical values of Richardson constant.

Hafnium dioxide effect on the electrical properties of M/n-GaN structure

Laboratoire de Micro-Electronique Appliquée

Université Djillali Liables de Sidi Bel Abbes

Materials Science-Poland

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

{"article-title":"Hafnium dioxide effect on the electrical properties of M/n-GaN structure"}

In the present paper, using of SILVACO-TCAD numerical simulator for studying the enhancement in Pt/n-GaN Schottky diode current–voltage (I-V) characteristics...

Hafnium dioxide effect on the electrical properties of M/n-GaN structure

Online veröffentlicht: 08. Mai 2020

Seitenbereich: 165 - 173

Eingereicht: 21. Dez. 2018

Akzeptiert: 23. Apr. 2019

DOI: https://doi.org/10.2478/msp-2020-0020

Schlüsselwörter
Schottky diode, Pt/n-GaN, Pt/HfO/n-GaN, (I-V), Norde, Cheung, Mikhelashvili and Chattopadhyay methods, modified Richardson equation

© 2020 Sadoun Ali et al., published by Sciendo

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

Hafnium dioxide effect on the electrical properties of M/n-GaN structure

Online veröffentlicht: 08. Mai 2020

Seitenbereich: 165 - 173

Eingereicht: 21. Dez. 2018

Akzeptiert: 23. Apr. 2019

DOI: https://doi.org/10.2478/msp-2020-0020

SchlüsselwörterSchottky diode, Pt/n-GaN, Pt/HfO/n-GaN, (I-V), Norde, Cheung, Mikhelashvili and Chattopadhyay methods, modified Richardson equation

© 2020 Sadoun Ali et al., published by Sciendo

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

Schlüsselwörter
Schottky diode, Pt/n-GaN, Pt/HfO/n-GaN, (I-V), Norde, Cheung, Mikhelashvili and Chattopadhyay methods, modified Richardson equation