<abstract xmlns="http://www.w3.org/1999/xhtml">The SiN/SiO2 stack is widely used to passivate the surface of n-type monocrystalline silicon solar cells. In this work, we have undertaken a study to compare the stack layer obtained with SiO2 grown by both rapid thermal and chemical ways to passivate n-type monocrystalline silicon surface. By varying the plateau time and the plateau temperature of the rapid thermal oxidation, we determined the parameters to grow 10 nm thick oxide. Two-step nitric acid oxidation was used to grow 2 nm thick silicon oxide. Silicon nitride films with three refractive indices were used to produce the SiN/SiO2 stack. Regarding this parameter, the minority carrier lifetime measured by means of QSSPC revealed that the refractive index of 1.9 ensured the best passivation quality of silicon wafer surface. We also found that stacks with nitric acid oxidation showed definitely the best passivation quality. In addition to produce the most efficient passivation, this technique has the lowest thermal budget.</abstract>

The SiN/SiO2 stack is widely used to passivate the surface of n-type monocrystalline silicon solar cells. In this work, we have undertaken a study to compare the stack layer obtained with SiO2 grown by both rapid thermal and chemical ways to passivate n-type monocrystalline silicon surface. By varying the plateau time and the plateau temperature of the rapid thermal oxidation, we determined the parameters to grow 10 nm thick oxide. Two-step nitric acid oxidation was used to grow 2 nm thick silicon oxide. Silicon nitride films with three refractive indices were used to produce the SiN/SiO2 stack. Regarding this parameter, the minority carrier lifetime measured by means of QSSPC revealed that the refractive index of 1.9 ensured the best passivation quality of silicon wafer surface. We also found that stacks with nitric acid oxidation showed definitely the best passivation quality. In addition to produce the most efficient passivation, this technique has the lowest thermal budget.

SiN/SiO2 passivation stack of n-type silicon surface

Materials Science-Poland

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

SiN/SiO passivation stack of n-type silicon surface

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The SiN/SiO2 stack is widely used to passivate the surface of n-type monocrystalline silicon solar cells. In this work, we have undertaken a study to compare...

SiN/SiO₂ passivation stack of n-type silicon surface

Online veröffentlicht: 18. Okt. 2019

Seitenbereich: 482 - 487

Eingereicht: 28. Okt. 2018

Akzeptiert: 23. Apr. 2019

DOI: https://doi.org/10.2478/msp-2019-0065

Schlüsselwörter
silicon, passivation, silicon nitride, oxide

© 2019 A. El Amrani et al., published by Sciendo

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

SiN/SiO2 passivation stack of n-type silicon surface

Online veröffentlicht: 18. Okt. 2019

Seitenbereich: 482 - 487

Eingereicht: 28. Okt. 2018

Akzeptiert: 23. Apr. 2019

DOI: https://doi.org/10.2478/msp-2019-0065

Schlüsselwörtersilicon, passivation, silicon nitride, oxide

© 2019 A. El Amrani et al., published by Sciendo

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

SiN/SiO₂ passivation stack of n-type silicon surface

Schlüsselwörter
silicon, passivation, silicon nitride, oxide