<abstract xmlns="http://www.w3.org/1999/xhtml">Pure GaAs and GaAs1−xBix alloys with different Bi ratios (1 %, 2.5 %, 3.5 %) fitted with silver contacts were measured with a dielectric spectroscopy device. Dielectric characterization was performed at room temperature in the frequency range of 0.1 Hz to 1 MHz. GaAs exhibits three relaxation regions corresponding to space-charge, dipolar and ionic polarizations in sequence with increasing frequency while GaAs1−xBix samples show only a broad dipolar polarization in the same frequency range. This result proves the filling of the lattice with Bi through making a new bonding reducing the influence of ionic polarization. This finding supports the previous results concerning optical properties of GaAs1−xBix, presented in the literature.</abstract>

Pure GaAs and GaAs1−xBix alloys with different Bi ratios (1 %, 2.5 %, 3.5 %) fitted with silver contacts were measured with a dielectric spectroscopy device. Dielectric characterization was performed at room temperature in the frequency range of 0.1 Hz to 1 MHz. GaAs exhibits three relaxation regions corresponding to space-charge, dipolar and ionic polarizations in sequence with increasing frequency while GaAs1−xBix samples show only a broad dipolar polarization in the same frequency range. This result proves the filling of the lattice with Bi through making a new bonding reducing the influence of ionic polarization. This finding supports the previous results concerning optical properties of GaAs1−xBix, presented in the literature.

Influence of Bi on dielectric properties of GaAs1−xBix alloys

Materials Science-Poland

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Influence of Bi on dielectric properties of GaAsBi alloys

Pure GaAs and GaAs1−xBix alloys with different Bi ratios (1 %, 2.5 %, 3.5 %) fitted with silver contacts were measured with a dielectric spectroscopy device....

Influence of Bi on dielectric properties of GaAs_1−xBi_x alloys

Online veröffentlicht: 02. Aug. 2019

Seitenbereich: 244 - 248

Eingereicht: 21. Juli 2018

Akzeptiert: 13. Sept. 2018

DOI: https://doi.org/10.2478/msp-2019-0025

Schlüsselwörter
GaAsBi, alloys, dielectric properties, dielectric modulus

© 2019 K. Ulutas et al., published by Sciendo

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

Influence of Bi on dielectric properties of GaAs1−xBix alloys

Online veröffentlicht: 02. Aug. 2019

Seitenbereich: 244 - 248

Eingereicht: 21. Juli 2018

Akzeptiert: 13. Sept. 2018

DOI: https://doi.org/10.2478/msp-2019-0025

SchlüsselwörterGaAsBi, alloys, dielectric properties, dielectric modulus

© 2019 K. Ulutas et al., published by Sciendo

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

Influence of Bi on dielectric properties of GaAs_1−xBi_x alloys

Schlüsselwörter
GaAsBi, alloys, dielectric properties, dielectric modulus