<abstract xmlns="http://www.w3.org/1999/xhtml">Copper tin sulfide (Cu2SnS3) is a unique semiconductor, whose nanocrystals have attracted researchers’ attention for its tunable energy bandgap and wavelength in visible and near infrared range. Quantum dots which are fabricated from this material are highly suitable for optoelectronics and solar cell applications. This paper discusses the tunable energy bandgap, exciton Bohr radius and wavelength range of wurtzite structure of Cu2SnS3 quantum dots to assess the opportunity to use them in optoelectronics applications. The considerations show that the mole fraction of copper increases as energy bandgap decreases and tunable energy bandgap of this quantum dot material is inversely proportional to the wavelength.</abstract>

Copper tin sulfide (Cu2SnS3) is a unique semiconductor, whose nanocrystals have attracted researchers’ attention for its tunable energy bandgap and wavelength in visible and near infrared range. Quantum dots which are fabricated from this material are highly suitable for optoelectronics and solar cell applications. This paper discusses the tunable energy bandgap, exciton Bohr radius and wavelength range of wurtzite structure of Cu2SnS3 quantum dots to assess the opportunity to use them in optoelectronics applications. The considerations show that the mole fraction of copper increases as energy bandgap decreases and tunable energy bandgap of this quantum dot material is inversely proportional to the wavelength.

Modelling of electronic and optical properties of Cu2SnS3 quantum dots for optoelectronics applications

Department of Electronics and Communication Engineering

Department of Chemical Engineering, SSN College of Engineering

Materials Science-Poland

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

Modelling of electronic and optical properties of CuSnS quantum dots for optoelectronics applications

Copper tin sulfide (Cu2SnS3) is a unique semiconductor, whose nanocrystals have attracted researchers’ attention for its tunable energy bandgap and wavelength...

Modelling of electronic and optical properties of Cu₂SnS₃ quantum dots for optoelectronics applications

Online veröffentlicht: 06. März 2019

Seitenbereich: 108 - 115

Eingereicht: 09. Feb. 2018

Akzeptiert: 26. Mai 2018

DOI: https://doi.org/10.2478/msp-2018-0103

Schlüsselwörter
CuSnS, quantum dots, tunable wavelength, bandgap, optoelectronics

© 2019 M. Irshad Ahamed et al., published by Sciendo

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

Modelling of electronic and optical properties of Cu2SnS3 quantum dots for optoelectronics applications

Online veröffentlicht: 06. März 2019

Seitenbereich: 108 - 115

Eingereicht: 09. Feb. 2018

Akzeptiert: 26. Mai 2018

DOI: https://doi.org/10.2478/msp-2018-0103

SchlüsselwörterCuSnS, quantum dots, tunable wavelength, bandgap, optoelectronics

© 2019 M. Irshad Ahamed et al., published by Sciendo

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

Modelling of electronic and optical properties of Cu₂SnS₃ quantum dots for optoelectronics applications

Schlüsselwörter
CuSnS, quantum dots, tunable wavelength, bandgap, optoelectronics