<abstract xmlns="http://www.w3.org/1999/xhtml"><p>Dispersion models are necessary for precise determination of the dielectric response of materials used in optical and microelectronics industry. Although the study of the dielectric response is often limited only to the dependence of the optical constants on frequency, it is also important to consider its dependence on other quantities characterizing the state of the system. One of the most important quantities determining the state of the condensed matter in equilibrium is temperature. Introducing temperature dependence into dispersion models is quite challenging. A physically correct model of dielectric response must respect three fundamental and one supplementary conditions imposed on the dielectric function. The three fundamental conditions are the time-reversal symmetry, Kramers-Kronig consistency and sum rule. These three fundamental conditions are valid for any material in any state. For systems in equilibrium there is also a supplementary dissipative condition. In this contribution it will be shown how these conditions can be applied in the construction of temperature dependent dispersion models. Practical results will be demonstrated on the temperature dependent dispersion model of crystalline silicon.</p></abstract>

Dispersion models are necessary for precise determination of the dielectric response of materials used in optical and microelectronics industry. Although the study of the dielectric response is often limited only to the dependence of the optical constants on frequency, it is also important to consider its dependence on other quantities characterizing the state of the system. One of the most important quantities determining the state of the condensed matter in equilibrium is temperature. Introducing temperature dependence into dispersion models is quite challenging. A physically correct model of dielectric response must respect three fundamental and one supplementary conditions imposed on the dielectric function. The three fundamental conditions are the time-reversal symmetry, Kramers-Kronig consistency and sum rule. These three fundamental conditions are valid for any material in any state. For systems in equilibrium there is also a supplementary dissipative condition. In this contribution it will be shown how these conditions can be applied in the construction of temperature dependent dispersion models. Practical results will be demonstrated on the temperature dependent dispersion model of crystalline silicon.

Temperature dependent dispersion models applicable in solid state physics

Department of Physical Electronics, Faculty of Science

Journal of Electrical Engineering

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

{"article-title":"Temperature dependent dispersion models applicable in solid state physics"}

Dispersion models are necessary for precise determination of the dielectric response of materials used in optical and microelectronics industry. Although the...

Temperature dependent dispersion models applicable in solid state physics

Online veröffentlicht: 28. Sept. 2019

Seitenbereich: 1 - 15

Eingereicht: 19. März 2019

DOI: https://doi.org/10.2478/jee-2019-0036

Schlüsselwörter
temperature dependent dielectrics dispersion model, Kramers-Kronig relation, crystalline silicon

© 2019 Daniel Franta et al., published by Sciendo

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

Temperature dependent dispersion models applicable in solid state physics

Online veröffentlicht: 28. Sept. 2019

Seitenbereich: 1 - 15

Eingereicht: 19. März 2019

DOI: https://doi.org/10.2478/jee-2019-0036

Schlüsselwörtertemperature dependent dielectrics dispersion model, Kramers-Kronig relation, crystalline silicon

© 2019 Daniel Franta et al., published by Sciendo

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

Schlüsselwörter
temperature dependent dielectrics dispersion model, Kramers-Kronig relation, crystalline silicon