Correlation of Selected Problems During Gan Movpe Epitaxy on si Substrates with in–Situ Interferometer Observation

Online veröffentlicht: 05. Nov. 2014

Seitenbereich: 294 - 298

Eingereicht: 15. Juni 2014

DOI: https://doi.org/10.2478/jee-2014-0047

Schlüsselwörter

Gallium nitride, GaN on Si, MOVPE, transition AlGaN, in-situ observation

© Faculty of Electrical Engineering and Information Technology, Slovak University of Technology

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