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Residual Hole Concentration in Recombination Centres after Bleaching

N. K. Pawlak
N. K. Pawlak
, 
A. Timar-Gabor
A. Timar-Gabor
 und 
A. Chruścińska
A. Chruścińska
   | 31. Dez. 2021
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Online veröffentlicht: 31. Dez. 2021
Seitenbereich: 415 - 427
Eingereicht: 09. Nov. 2021
Akzeptiert: 06. Dez. 2021
DOI: https://doi.org/10.2478/geochr-2021-0008
Schlüsselwörter
© 2021 N. K. Pawlak et al., published by Sciendo
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Fig. 1

Energy levels and transitions taken into account in the model used in the simulations.
Energy levels and transitions taken into account in the model used in the simulations.

Fig. 2

Results of simulations for recombination centres having equal concentrations (M1 = M2 = 1011 cm−3) and recombination coefficients (β1 = β2 = 10−10 cm3 s−1) for different values of the concentration of disconnected traps. (a) An example of growth curves for the electron and hole concentrations, respectively, in traps and recombination centres for the case when concentration of disconnected traps is N4 = 5 × 1010 cm−3; (b) The dependence of RHC after total emptying of shallower traps by optical stimulation for 1000 s on the total dose which was previously absorbed for four different values of N4. RHC, residual hole concentration.
Results of simulations for recombination centres having equal concentrations (M1 = M2 = 1011 cm−3) and recombination coefficients (β1 = β2 = 10−10 cm3 s−1) for different values of the concentration of disconnected traps. (a) An example of growth curves for the electron and hole concentrations, respectively, in traps and recombination centres for the case when concentration of disconnected traps is N4 = 5 × 1010 cm−3; (b) The dependence of RHC after total emptying of shallower traps by optical stimulation for 1000 s on the total dose which was previously absorbed for four different values of N4. RHC, residual hole concentration.

Fig. 3

The dependence of hole concentrations in both the recombination centres (M1 = M2 = 1011 cm−3, β1 = β2 = 10−10 cm3 s−1) on the total dose for different times of bleaching and two different concentrations of disconnected traps are (a) N4 = 109 cm−3; (b) N4 = 5 × 1010 cm−3. The concentrations of optically active traps are N2 = 109 cm−3 and N3 = 2.5 × 108 cm−3.
The dependence of hole concentrations in both the recombination centres (M1 = M2 = 1011 cm−3, β1 = β2 = 10−10 cm3 s−1) on the total dose for different times of bleaching and two different concentrations of disconnected traps are (a) N4 = 109 cm−3; (b) N4 = 5 × 1010 cm−3. The concentrations of optically active traps are N2 = 109 cm−3 and N3 = 2.5 × 108 cm−3.

Fig. 4

Results of simulations for recombination centres having equal recombination coefficients (β1 = β2 = 10−10 cm3 s−1) and concentrations, respectively, M1 = 1011 cm−3 and M2 = 4 × 1010 cm−3, for different values of the coefficient of probability of electron trapping in disconnected traps A4. (a) An example of growth curves for the electron and hole concentrations in traps and recombination centres for the case when coefficient A4 = 10−10 cm3 s−1; (b) The dependence of RHC on the total dose which was previously absorbed for four different values of A4. The concentration of disconnected traps is set to N4 = 5 × 1010 cm−3. RHC, residual hole concentration.
Results of simulations for recombination centres having equal recombination coefficients (β1 = β2 = 10−10 cm3 s−1) and concentrations, respectively, M1 = 1011 cm−3 and M2 = 4 × 1010 cm−3, for different values of the coefficient of probability of electron trapping in disconnected traps A4. (a) An example of growth curves for the electron and hole concentrations in traps and recombination centres for the case when coefficient A4 = 10−10 cm3 s−1; (b) The dependence of RHC on the total dose which was previously absorbed for four different values of A4. The concentration of disconnected traps is set to N4 = 5 × 1010 cm−3. RHC, residual hole concentration.

Fig. 5

Results of simulations for recombination centres having equal concentrations (M1 = M2 = 1011 cm−3) and different values of the recombination coefficients β1 and β2. β1 is fixed and equal to 10−10 cm3 s−1, when β2 is changed. (a) An example of growth curves for the electron and hole concentrations in traps and recombination centres for the case when the recombination coefficient β2 = 10−11 cm3 s−1. (b) The dependence of RHC on the total dose which was previously absorbed for five different values of β2. The concentration of disconnected traps is set at N4 = 5 × 1010 cm−3. RHC, residual hole concentration.
Results of simulations for recombination centres having equal concentrations (M1 = M2 = 1011 cm−3) and different values of the recombination coefficients β1 and β2. β1 is fixed and equal to 10−10 cm3 s−1, when β2 is changed. (a) An example of growth curves for the electron and hole concentrations in traps and recombination centres for the case when the recombination coefficient β2 = 10−11 cm3 s−1. (b) The dependence of RHC on the total dose which was previously absorbed for five different values of β2. The concentration of disconnected traps is set at N4 = 5 × 1010 cm−3. RHC, residual hole concentration.

Fig. 6

Results of simulations for recombination centres having equal concentrations and different values of recombination coefficients β1 and β2. β1 is fixed and equal to 10−10 cm3 s−1, when β2 is changed. (a) Example of growth curves for the electron and hole concentrations in traps and recombination centres for the case when their concentrations are M1 = M2 = 2 × 1011 cm−3 and recombination coefficient β2 = 5 × 10−10 cm3 s1. (b) The dependence of RHC on the total dose which was previously absorbed for five different values of β2 when M1 = M2 = 2 × 1011 cm−3. (c) Example of growth curves for the electron and hole concentrations in traps and recombination centres for the case when their concentrations are M1 = M2 = 5× 1010 cm−3 and recombination coefficient β2 = 10−11 cm3 s−1. (d) The dependence of RHC on the total dose for five different values of β2 when M1 = M2 = 5 × 1010 cm−3. The concentration of disconnected traps is N4 = 5 × 1010 cm−3. RHC, residual hole concentration.
Results of simulations for recombination centres having equal concentrations and different values of recombination coefficients β1 and β2. β1 is fixed and equal to 10−10 cm3 s−1, when β2 is changed. (a) Example of growth curves for the electron and hole concentrations in traps and recombination centres for the case when their concentrations are M1 = M2 = 2 × 1011 cm−3 and recombination coefficient β2 = 5 × 10−10 cm3 s1. (b) The dependence of RHC on the total dose which was previously absorbed for five different values of β2 when M1 = M2 = 2 × 1011 cm−3. (c) Example of growth curves for the electron and hole concentrations in traps and recombination centres for the case when their concentrations are M1 = M2 = 5× 1010 cm−3 and recombination coefficient β2 = 10−11 cm3 s−1. (d) The dependence of RHC on the total dose for five different values of β2 when M1 = M2 = 5 × 1010 cm−3. The concentration of disconnected traps is N4 = 5 × 1010 cm−3. RHC, residual hole concentration.

Fig. 7

Results of simulations for recombination centres for fixed recombination coefficients: β1 = 10−10 cm3 s−1, β2 = 10−11 cm3 s−1 and various ratios of the recombination centre concentrations M1/M2. M1 is always equal to 1011 cm−3 and the value of M2 is changed; N4 = 5 × 1010 cm−3. (a) Example of growth curves for the electron and hole concentrations in traps and recombination centres for the case when the recombination centre concentration is M2 = 5 × 1011 cm−3. (b) The dependence of RHC on the total dose which was previously absorbed for five different values of M2. RHC, residual hole concentration.
Results of simulations for recombination centres for fixed recombination coefficients: β1 = 10−10 cm3 s−1, β2 = 10−11 cm3 s−1 and various ratios of the recombination centre concentrations M1/M2. M1 is always equal to 1011 cm−3 and the value of M2 is changed; N4 = 5 × 1010 cm−3. (a) Example of growth curves for the electron and hole concentrations in traps and recombination centres for the case when the recombination centre concentration is M2 = 5 × 1011 cm−3. (b) The dependence of RHC on the total dose which was previously absorbed for five different values of M2. RHC, residual hole concentration.

Fig. 8

Result of simulations for recombination centres for selected cases when the concentration M2 of recombination centre with the lower recombination coefficient is smaller than the concentration of the disconnected traps N4 = 5 × 1010 cm−3. The recombination coefficients: β1 = 10−10 cm3 s−1, β2 = 10−11 cm3 s−1 and the concentration M1 = 1011 cm−3. (a) Example of growth curves for the electron and hole concentrations in traps and recombination centres for the case when the recombination centre concentration is M2 = 3 × 1010 cm−3. (b) The dependence of RHC on the total dose for three different values of M2. RHC, residual hole concentration.
Result of simulations for recombination centres for selected cases when the concentration M2 of recombination centre with the lower recombination coefficient is smaller than the concentration of the disconnected traps N4 = 5 × 1010 cm−3. The recombination coefficients: β1 = 10−10 cm3 s−1, β2 = 10−11 cm3 s−1 and the concentration M1 = 1011 cm−3. (a) Example of growth curves for the electron and hole concentrations in traps and recombination centres for the case when the recombination centre concentration is M2 = 3 × 1010 cm−3. (b) The dependence of RHC on the total dose for three different values of M2. RHC, residual hole concentration.
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