<abstract xmlns="http://www.w3.org/1999/xhtml">

MoO3 thin films have been prepared by a simple spray pyrolysis technique at substrate temperature 250°c. The structure and morphology of thin films are characterized by X-ray powder diffraction (XRD), scanning electron microscopy and UV-vis spectroscopy. The gas sensing properties of MoO3 thin film is studied at gas concentration 400 ppm and working temperature of 100–400 °c. It was found that the sensitivity depended on the working temperatures and also H2S gas concentration. The results show that the MoO3 thin film can be used to fabricate high performance H2S gas sensors.
</abstract>

MoO3 thin films have been prepared by a simple spray pyrolysis technique at substrate temperature 250°c. The structure and morphology of thin films are characterized by X-ray powder diffraction (XRD), scanning electron microscopy and UV-vis spectroscopy. The gas sensing properties of MoO3 thin film is studied at gas concentration 400 ppm and working temperature of 100–400 °c. It was found that the sensitivity depended on the working temperatures and also H2S gas concentration. The results show that the MoO3 thin film can be used to fabricate high performance H2S gas sensors.

Preparation of MoO3 Thin Films by Spray Pyrolysis and its Gas Sensing Performance

International Journal on Smart Sensing and Intelligent Systems

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Preparation of MoO Thin Films by Spray Pyrolysis and its Gas Sensing Performance

MoO3 thin films have been prepared by a simple spray pyrolysis technique at substrate temperature 250°c. The structure and morphology of thin films are...

Preparation of MoO₃ Thin Films by Spray Pyrolysis and its Gas Sensing Performance

Online veröffentlicht: 01. Sept. 2012

Seitenbereich: 592 - 605

Akzeptiert: 01. Aug. 2012

DOI: https://doi.org/10.21307/ijssis-2017-497

© 2012 D. V. Ahire et al., published by Sciendo

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.