<abstract xmlns="http://www.w3.org/1999/xhtml">
				
				 This work aims to study the electrical conduction mechanism in the dielectric material BaZr0.1Ti0.9O3 (BZT) ceramics by applying AC signal in the frequency range of 102 Hz to 106 Hz. The phase purity and microstructure of the sample have been studied by X-ray diffraction refinement and field-emission scanning electron microscope (FE-SEM) analysis. The appearance of resonance peaks in the loss tangent at high temperature is due to inherent dielectric relaxation processes of this oxide. The temperature dependent Cole-Cole plot has been studied in details to determine both the grain and grain boundary contribution to the conductivity. Electrical modulus analysis reveals that the hopping of charge carriers is the most probable conduction mechanism in BZT ceramics. The obtained data of AC conductivity obey the universal double power law and have been discussed in terms of microstructural network characteristics. The behavior of frequency exponent n of AC conductivity as a function of temperature verify the applicability of the correlated barrier hopping (CBH) model. The AC conductivity data are used to estimate the minimum hopping length, density of states at Fermi level, thermal conductivity and apparent activation energy. The value of activation energy confirms that the oxygen vacancies play a vital role in the conduction mechanism.
			</abstract>

This work aims to study the electrical conduction mechanism in the dielectric material BaZr0.1Ti0.9O3 (BZT) ceramics by applying AC signal in the frequency range of 102 Hz to 106 Hz. The phase purity and microstructure of the sample have been studied by X-ray diffraction refinement and field-emission scanning electron microscope (FE-SEM) analysis. The appearance of resonance peaks in the loss tangent at high temperature is due to inherent dielectric relaxation processes of this oxide. The temperature dependent Cole-Cole plot has been studied in details to determine both the grain and grain boundary contribution to the conductivity. Electrical modulus analysis reveals that the hopping of charge carriers is the most probable conduction mechanism in BZT ceramics. The obtained data of AC conductivity obey the universal double power law and have been discussed in terms of microstructural network characteristics. The behavior of frequency exponent n of AC conductivity as a function of temperature verify the applicability of the correlated barrier hopping (CBH) model. The AC conductivity data are used to estimate the minimum hopping length, density of states at Fermi level, thermal conductivity and apparent activation energy. The value of activation energy confirms that the oxygen vacancies play a vital role in the conduction mechanism.

Dielectric relaxation and study of electrical conduction mechanism in BaZr0.1Ti0.9O3 ceramics by correlated barrier hopping model

Materials Science-Poland

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

Dielectric relaxation and study of electrical conduction mechanism in BaZrTiO ceramics by correlated barrier hopping model

This work aims to study the electrical conduction mechanism in the dielectric material BaZr0.1Ti0.9O3 (BZT) ceramics by applying AC signal in the frequency...

Dielectric relaxation and study of electrical conduction mechanism in BaZr_0.1Ti_0.9O₃ ceramics by correlated barrier hopping model

Online veröffentlicht: 18. Mai 2018

Seitenbereich: 112 - 122

Eingereicht: 28. Juni 2017

Akzeptiert: 29. Jan. 2018

DOI: https://doi.org/10.1515/msp-2018-0013

Schlüsselwörter
Rietveld refinement, dielectric relaxation, electrical conductivity mechanism, correlated barrier hopping model

© 2018

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

Dielectric relaxation and study of electrical conduction mechanism in BaZr0.1Ti0.9O3 ceramics by correlated barrier hopping model

Online veröffentlicht: 18. Mai 2018

Seitenbereich: 112 - 122

Eingereicht: 28. Juni 2017

Akzeptiert: 29. Jan. 2018

DOI: https://doi.org/10.1515/msp-2018-0013

SchlüsselwörterRietveld refinement, dielectric relaxation, electrical conductivity mechanism, correlated barrier hopping model

© 2018

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

Dielectric relaxation and study of electrical conduction mechanism in BaZr_0.1Ti_0.9O₃ ceramics by correlated barrier hopping model

Schlüsselwörter
Rietveld refinement, dielectric relaxation, electrical conductivity mechanism, correlated barrier hopping model