Heavily Si-doped InAs photoluminescence measurements
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31. Okt. 2017
Über diesen Artikel
Online veröffentlicht: 31. Okt. 2017
Seitenbereich: 647 - 650
Eingereicht: 03. Apr. 2017
Akzeptiert: 30. Aug. 2017
DOI: https://doi.org/10.1515/msp-2017-0075
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© 2017
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.
Grodecki, Kacper
Institute of Applied Physics, Military University of Technology, 2 Kaliskiego St., 00-908Warsaw, Poland
Murawski, Krzysztof
Institute of Applied Physics, Military University of Technology, 2 Kaliskiego St., 00-908Warsaw, Poland
Henig, Aleksandra
Institute of Applied Physics, Military University of Technology, 2 Kaliskiego St., 00-908Warsaw, Poland
Michalczewski, Krystian
Institute of Applied Physics, Military University of Technology, 2 Kaliskiego St., 00-908Warsaw, Poland
Benyahia, Djalal
Institute of Applied Physics, Military University of Technology, 2 Kaliskiego St., 00-908Warsaw, Poland
Kubiszyn, Łukasz
Kaliskiego St., 00-908 Warsaw, Poland 2Vigo System S.A., 129/133 Poznañska St., 05-850Ożarów Mazowiecki, Poland
Martyniuk, Piotr
Institute of Applied Physics, Military University of Technology, 2 Kaliskiego St., 00-908Warsaw, Poland