<abstract xmlns="http://www.w3.org/1999/xhtml">The composition dependence of physical properties of chalcogenides has recently been studied for their phase change properties and energy conversion. In the present work, we report the structure, composition, optical and Raman spectroscopy results for bulk polycrystalline InxSb20−xAg10Se70 (0 ⩽ × ⩽ 15) samples. The phase quantification and composition have been studied by using XRD and EDX techniques. The alloy composition up to 5 at.% of indium resulted in crystallization of AgSbSe2, while further increase in In content favored the formation of another chalcopyrite AgInSe2 phase yielding the solid solutions for this alloy system. A decrease in band gap up to x = 5 followed by its increase with an increase in indium concentration has been observed. The variations in shape and position of characteristic Raman bands has been used for understanding the structural modifications of the network with the variation in indium content.</abstract>

The composition dependence of physical properties of chalcogenides has recently been studied for their phase change properties and energy conversion. In the present work, we report the structure, composition, optical and Raman spectroscopy results for bulk polycrystalline InxSb20−xAg10Se70 (0 ⩽ × ⩽ 15) samples. The phase quantification and composition have been studied by using XRD and EDX techniques. The alloy composition up to 5 at.% of indium resulted in crystallization of AgSbSe2, while further increase in In content favored the formation of another chalcopyrite AgInSe2 phase yielding the solid solutions for this alloy system. A decrease in band gap up to x = 5 followed by its increase with an increase in indium concentration has been observed. The variations in shape and position of characteristic Raman bands has been used for understanding the structural modifications of the network with the variation in indium content.

Spectroscopic investigations of polycrystalline InxSb20−xAg10Se70 (0 ⩽ × ⩽ 15) multicomponent chalcogenides

Semiconductors Laboratory, Department of Physics, GND University, Amritsar 143005,

Department of Physics, DAV University, Sarmastpur, Jalandhar-144012,

Materials Science-Poland

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Spectroscopic investigations of polycrystalline InSbAgSe (0 ⩽ × ⩽ 15) multicomponent chalcogenides

The composition dependence of physical properties of chalcogenides has recently been studied for their phase change properties and energy conversion. In the...

x	at.%
x	Se	Sb	Ag	In
0	72.66	18.04	9.30	0.00
5	72.10	13.75	9.56	4.59
10	72.42	9.85	8.95	8.77
15	74.70	4.53	8.57	12.20

Composition	Eg	B−1
(x)	[eV]	[× 10⁻⁴ cm⁻¹ ⋅eV⁻¹]
0	1.59	137.5
5	1.30	138.7
10	1.71	69.4
15	2.06	54.1

Spectroscopic investigations of polycrystalline In_xSb_20−xAg₁₀Se₇₀ (0 ⩽ × ⩽ 15) multicomponent chalcogenides

Online veröffentlicht: 19. Dez. 2016

Seitenbereich: 794 - 799

Eingereicht: 16. Feb. 2016

Akzeptiert: 05. Sept. 2016

DOI: https://doi.org/10.1515/msp-2016-0114

Schlüsselwörter
chalcogenides, optical properties, Raman spectroscopy, XRD, XRD analysis, EDS

© Wroclaw University of Technology

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Compositions of as-prepared bulk InxSb20−xAg10Se70 (0 ⩽ x ⩽ 15) chalcogenide alloys obtained by using EDS spectroscopy.

Optical band gap (Eg) and tailing parameter (B−1) of the as-prepared InxSb20−xAg10Se70 chalcogenide alloys.

Spectroscopic investigations of polycrystalline InxSb20−xAg10Se70 (0 ⩽ × ⩽ 15) multicomponent chalcogenides

Online veröffentlicht: 19. Dez. 2016

Seitenbereich: 794 - 799

Eingereicht: 16. Feb. 2016

Akzeptiert: 05. Sept. 2016

DOI: https://doi.org/10.1515/msp-2016-0114

Schlüsselwörterchalcogenides, optical properties, Raman spectroscopy, XRD, XRD analysis, EDS

© Wroclaw University of Technology

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Compositions of as-prepared bulk InxSb20−xAg10Se70 (0 ⩽ x ⩽ 15) chalcogenide alloys obtained by using EDS spectroscopy.

Optical band gap (Eg) and tailing parameter (B−1) of the as-prepared InxSb20−xAg10Se70 chalcogenide alloys.

Spectroscopic investigations of polycrystalline In_xSb_20−xAg₁₀Se₇₀ (0 ⩽ × ⩽ 15) multicomponent chalcogenides

Schlüsselwörter
chalcogenides, optical properties, Raman spectroscopy, XRD, XRD analysis, EDS