<abstract xmlns="http://www.w3.org/1999/xhtml">A model is developed to describe the pressure dependence of the band gap energy for the dilute nitride GaNxAs1–x. It is found that the sublinear pressure dependence of E− is due to the coupling interaction between E+ and E−. We have also found that GaNxAs1−x needs much larger pressure than GaAs to realize the transition from direct to indirect band gap. It is due to two factors. One is the coupling interaction between the E+ and E−. The other is that the energy difference between the X conduction band minimum (CBM) and the G CBM in GaNxAs1−x is larger than that in GaAs. In addition, we explain the phenomenon that the energy difference between the X CBM and the G CBM in GaNxAs1−x is larger than that in GaAs. It is due to the impurity-host interaction.</abstract>

A model is developed to describe the pressure dependence of the band gap energy for the dilute nitride GaNxAs1–x. It is found that the sublinear pressure dependence of E− is due to the coupling interaction between E+ and E−. We have also found that GaNxAs1−x needs much larger pressure than GaAs to realize the transition from direct to indirect band gap. It is due to two factors. One is the coupling interaction between the E+ and E−. The other is that the energy difference between the X conduction band minimum (CBM) and the G CBM in GaNxAs1−x is larger than that in GaAs. In addition, we explain the phenomenon that the energy difference between the X CBM and the G CBM in GaNxAs1−x is larger than that in GaAs. It is due to the impurity-host interaction.

Pressure dependence of the band gap energy for the dilute nitride GaNxAs1−x

Tianjin Key Laboratory of Optoelectronic Detection Technology and Systems, School of Electronics and Information Engineering, Tianjin Polytechnics University, Tianjin, 300387,

College of Science, Civil Aviation University of China, Tianjin, 300300,

Materials Science-Poland

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Pressure dependence of the band gap energy for the dilute nitride GaNAs

A model is developed to describe the pressure dependence of the band gap energy for the dilute nitride GaNxAs1–x. It is found that the sublinear pressure...

Pressure dependence of the band gap energy for the dilute nitride GaN_xAs_1−x

Online veröffentlicht: 17. Dez. 2016

Seitenbereich: 881 - 885

Eingereicht: 04. Mai 2016

Akzeptiert: 25. Sept. 2016

DOI: https://doi.org/10.1515/msp-2016-0110

Schlüsselwörter
GaNAs, band gap energy, pressure dependence, dilute nitride

© 2016 Wroclaw University of Technology

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Pressure dependence of the band gap energy for the dilute nitride GaNxAs1−x

Online veröffentlicht: 17. Dez. 2016

Seitenbereich: 881 - 885

Eingereicht: 04. Mai 2016

Akzeptiert: 25. Sept. 2016

DOI: https://doi.org/10.1515/msp-2016-0110

SchlüsselwörterGaNAs, band gap energy, pressure dependence, dilute nitride

© 2016 Wroclaw University of Technology

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Pressure dependence of the band gap energy for the dilute nitride GaN_xAs_1−x

Schlüsselwörter
GaNAs, band gap energy, pressure dependence, dilute nitride