<abstract xmlns="http://www.w3.org/1999/xhtml"><p> The contribution deals with the preparation of graphene films by a transfer-free chemical vapour deposition process utilizing a thin cobalt layer. This method allows growing graphene directly on a dielectric substrate. The process was carried out in a cold-wall reactor with methane as carbon precursor. We managed to prepare bilayer graphene. The best results were obtained for a structure with a cobalt layer with a thickness of 50 nm. The quality of prepared graphene films and of the number of graphene layers were estimated using Raman spectroscopy. with a minimal dots diameter of 180 nm and spacing of 1000 nm were successfully developed.</p></abstract>

The contribution deals with the preparation of graphene films by a transfer-free chemical vapour deposition process utilizing a thin cobalt layer. This method allows growing graphene directly on a dielectric substrate. The process was carried out in a cold-wall reactor with methane as carbon precursor. We managed to prepare bilayer graphene. The best results were obtained for a structure with a cobalt layer with a thickness of 50 nm. The quality of prepared graphene films and of the number of graphene layers were estimated using Raman spectroscopy. with a minimal dots diameter of 180 nm and spacing of 1000 nm were successfully developed.

Graphene growth by transfer-free chemical vapour deposition on a cobalt layer

University of Chemistry and Technology, Prague, Technická 5, 166 28 Prague 6,

Journal of Electrical Engineering

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

{"article-title":"Graphene growth by transfer-free chemical vapour deposition on a cobalt layer"}

The contribution deals with the preparation of graphene films by a transfer-free chemical vapour deposition process utilizing a thin cobalt layer. This method...

Graphene growth by transfer-free chemical vapour deposition on a cobalt layer

Online veröffentlicht: 14. März 2017

Seitenbereich: 79 - 82

Eingereicht: 07. Juli 2016

DOI: https://doi.org/10.1515/jee-2017-0011

Schlüsselwörter
graphene, cold wall reactor, CVD process, transfer free process

© Faculty of Electrical Engineering and Information Technology, Slovak University of Technology

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

Graphene growth by transfer-free chemical vapour deposition on a cobalt layer

Online veröffentlicht: 14. März 2017

Seitenbereich: 79 - 82

Eingereicht: 07. Juli 2016

DOI: https://doi.org/10.1515/jee-2017-0011

Schlüsselwörtergraphene, cold wall reactor, CVD process, transfer free process

© Faculty of Electrical Engineering and Information Technology, Slovak University of Technology

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

Schlüsselwörter
graphene, cold wall reactor, CVD process, transfer free process