Login
Register
Reset Password
Publish & Distribute
Publishing Solutions
Distribution Solutions
Subjects
Architecture and Design
Arts
Business and Economics
Chemistry
Classical and Ancient Near Eastern Studies
Computer Sciences
Cultural Studies
Engineering
General Interest
Geosciences
History
Industrial Chemistry
Jewish Studies
Law
Library and Information Science, Book Studies
Life Sciences
Linguistics and Semiotics
Literary Studies
Materials Sciences
Mathematics
Medicine
Music
Pharmacy
Philosophy
Physics
Social Sciences
Sports and Recreation
Theology and Religion
Publications
Journals
Books
Proceedings
Publishers
Blog
Contact
Search
EUR
USD
GBP
English
English
Deutsch
Polski
Español
Français
Italiano
Cart
Home
Journals
Journal of Electrical Bioimpedance
Volume 4 (2013): Issue 1 (January 2013)
Open Access
Frequency dependent rectifier memristor bridge used as a programmable synaptic membrane voltage generator
Oliver Pabst
Oliver Pabst
and
Torsten Schmidt
Torsten Schmidt
| Jul 15, 2013
Journal of Electrical Bioimpedance
Volume 4 (2013): Issue 1 (January 2013)
About this article
Previous Article
Next Article
Abstract
Article
Figures & Tables
References
Authors
Articles in this Issue
Preview
PDF
Cite
Share
Article Category:
Articles
Published Online:
Jul 15, 2013
Page range:
23 - 32
Received:
Dec 29, 2012
DOI:
https://doi.org/10.5617/jeb.539
Keywords
Memristor bridge
,
rectifier
,
neuron
,
synaptic circuit
,
Hebbian learning
,
non-REM sleep
© 2013 Oliver Pabst, Torsten Schmidt, published by Sciendo
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.
Fig. 1
Dashed line: supplied sine current source, solid line: supplied sine voltage source, f = 30Hz, (a) Maximal state change xmax dependent on x0, Δt=T2,$\Delta t=\frac{T}{2},$(b) M(x) as a function of t for two different initial states and two source types.
Fig. 2
Schematic of the memristor bridge circuit.
Fig. 3
Voltage VRL as a function of time t, sine AC voltage source, V0 = 30V, xn(t = 0) = 0.5, (a) f = 0.5Hz, (b) f = 30Hz.
Fig. 4
Memristances M1 and M3 dependent on time t, sine AC voltage source, V0 = 30V, xn(t = 0) = 0.5, (a) f = 0.5Hz, (b) f = 30Hz.
Fig. 5
Approximate circuit equivalents: (a) Graetz circuit for very low frequencies, (b) Wheatstone circuit for very high frequencies.
Fig. 6
VRL dependent on t, supplied periodic square wave voltage source, V0 = 10V, xn(t = 0) = 0.5, (a) f = 0.5Hz, (b) f = 30Hz.
Fig. 7
System supplied by a periodic square wave voltage source with V0 = 10V, f = 30Hz, x1(0) = x4(0) = 0.5+e, x2(0) = x3(0) = 0.5−e. (a) M1(x) and M3(x) as a function of t for different initial conditions, (b) VRL dependent on t for different initial conditions.
Fig. 8
Output voltage of the memristor bridge dependent on time. Input voltage is a synaptic impulse as shown in Fig. 7 with e = 0.23. Initial states of this cell: (a) e = 0, (b) e = 0.23.
Fig. 9
Three neurons, N1 and N2 are activated, N3 is not activated (e = 0).
Fig. 10
Schematic diagram of the voltage curves.
Fig. 11
System excited by theta waves: periodic square wave voltage source with V0 = 10V, f = 7Hz, x1(0) = x4(0) = 0.5+e, x2(0) = x3(0) = 0.5−e. (a) M1(x) and M3(x) dependent on t for different initial conditions, (b) VRL dependent on t for different initial conditions.
Fig. 12
Schematic of two combined cells.
Fig. 13
Schematic of a presynaptic neuron which is connected to several postsynaptic neurons.
Fig. 14
VRL dependent on time t, analytical and numerical solution.
Fig. 15
Schematic of the circuit with two memristors.
Fig. 16
Implementation of the HP memristor in Matlab Simulink