1. bookVolume 32 (2014): Issue 1 (January 2014)
Journal Details
License
Format
Journal
eISSN
2083-134X
ISSN
2083-1331
First Published
16 Apr 2011
Publication timeframe
4 times per year
Languages
English
Open Access

A comparative study of dip coating and spray pyrolysis methods for synthesizing ITO nanolayers by using Ag colloidal sol

Published Online: 26 Mar 2014
Volume & Issue: Volume 32 (2014) - Issue 1 (January 2014)
Page range: 102 - 106
Journal Details
License
Format
Journal
eISSN
2083-134X
ISSN
2083-1331
First Published
16 Apr 2011
Publication timeframe
4 times per year
Languages
English
Abstract

Indium tin oxide (ITO) films were deposited on glass substrates by dip-coating and thermal pyrolysis methods. Sn (IV) is often used in the spray method as a precursor salt, but in this research we have employed a new procedure that uses Sn (II) and In(NO3)3 for preparation of transparent conductive thin films. Then, colloidal Ag was deposited on the ITO layers in order to compare the two synthesis methods, and the structural and electrical properties of the resultant films were investigated by FESEM, XRD, and four-terminal resistometry. The obtained films are polycrystalline with a preferred orientation of (200). The XRD patterns of the films indicate that in both films, the Sn phase is crystallized separately from In2O3. The presence of a Sn peak and the overall low intensity of XRD peaks suggest relative crystallization of ITO structure. For this reason, Ag films were deposited by dip coating method using a colloidal sol. By analyzing the XRD patterns of Ag-ITO films after eliminating the Sn peak, the increased intensity of the peaks confirmed the relatively good crystallization of the ITO films. The results show that the films with a sheet resistance as low as 2 × 10−2 Ω·cm, which is beneficial for solar cells, were achieved.

Keywords

[1] Houng B., Appl. Phys. Lett., 87 (2005), 251922. http://dx.doi.org/10.1063/1.214922310.1063/1.2149223Search in Google Scholar

[2] Armelao L., Barreca D., Bottaro G., Gasparotto A., Gross S., Maragno C., Tondello E., Chem. Rev., 250 (2006), 1294. 10.1016/j.ccr.2005.12.003Search in Google Scholar

[3] Buhler G., Tholmann D., Feldmann C., Adv. Mater., 19 (2007), 2224. http://dx.doi.org/10.1002/adma.20060210210.1002/adma.200602102Search in Google Scholar

[4] Viespe C., Nicolae L., Sima C., Grigorlu C., Medianu R., Thin Solid Films, 515 (2007), 8771. http://dx.doi.org/10.1016/j.tsf.2007.03.16710.1016/j.tsf.2007.03.167Search in Google Scholar

[5] Takaki S., Matsumoto K., Suzuki K., Appl. Surf. Sci., 33/34 (1988), 919. http://dx.doi.org/10.1016/0169-4332(88)90399-610.1016/0169-4332(88)90399-6Search in Google Scholar

[6] Djaoued Y., Phong V.H., Badilescu S., Ashrit P.V., Girouard F.E., Truong V.V., Thin Solid Films, 293 (1997), 108. http://dx.doi.org/10.1016/S0040-6090(96)09060-810.1016/S0040-6090(96)09060-8Search in Google Scholar

[7] Yamamoto O., Sasamoto T., Inagaki M., J. Mater. Res., 7 (1992), 2488. http://dx.doi.org/10.1557/JMR.1992.248810.1557/JMR.1992.2488Search in Google Scholar

[8] Toki M., Aizawa M., J. Sol-Gel. Sci. Techn., 8 (1997), 717. 10.1007/BF02436928Search in Google Scholar

[9] Stoica T.F., Stoica T.A., Vanca V., Lakatos E., Zaharescu M., Thin Solid Films., 483 (1999), 273. http://dx.doi.org/10.1016/S0040-6090(99)00136-410.1016/S0040-6090(99)00136-4Search in Google Scholar

[10] Major S., Chopra K.L., Sol. Energ. Mater., 17 (1988), 319. http://dx.doi.org/10.1016/0165-1633(88)90014-710.1016/0165-1633(88)90014-7Search in Google Scholar

[11] Rozati S.M., Ganji T., Renew. Energ., 29 (2004), 1671. http://dx.doi.org/10.1016/j.renene.2004.01.00810.1016/j.renene.2004.01.008Search in Google Scholar

[12] Ramaiah K.S., Raja V.S., Bhathagar A.K., Tomlinso R.D., Pilkington R.D., Hill A.B., Chang S.J., Suy K., Juang F.S., Semicond. Sci. Tech., 15 (2000), 676. http://dx.doi.org/10.1088/0268-1242/15/7/30510.1088/0268-1242/15/7/305Search in Google Scholar

[13] Sheu J.K., Su Y.K., Chi G.C., Jou M.J., Chang C.M., Appl. Phys. Lett., 72 (1999), 3317. http://dx.doi.org/10.1063/1.12163610.1063/1.121636Search in Google Scholar

[14] Cali C., Mosca M., Targia G., Solid State Electron., 42 (1998), 877. http://dx.doi.org/10.1016/S0038-1101(98)00084-710.1016/S0038-1101(98)00084-7Search in Google Scholar

[15] Maruyama T., Fukui K., J. Appl. Phys., 70 (1991), 3848. http://dx.doi.org/10.1063/1.34918910.1063/1.349189Search in Google Scholar

[16] Vetrone J., Chung Y.W., J. Vac. Sci. Technol. A, 9 (1991), 3041. http://dx.doi.org/10.1116/1.57717010.1116/1.577170Search in Google Scholar

[17] Mattox D.M., Thin Solid Films, 204 (1991), 25. http://dx.doi.org/10.1016/0040-6090(91)90491-F10.1016/0040-6090(91)90491-FSearch in Google Scholar

[18] Beaurain A., Luxembourg D., Dufour C., Koncar V., Capoen B., Bouazaoui M., Thin Solid Films, 516 (2008), 4102. http://dx.doi.org/10.1016/j.tsf.2007.10.02110.1016/j.tsf.2007.10.021Search in Google Scholar

[19] Stoica T.F., Teodorescu V.S., Blanchin M.G., Stoi T.A., Gartner M., Losurdo M., Zaharescu M., Mater. Sci. Eng. B-Adv., 101 (2003), 222. http://dx.doi.org/10.1016/S0921-5107(02)00667-010.1016/S0921-5107(02)00667-0Search in Google Scholar

[20] Mohlkar A.V., Pawar S.M., Rajpure K.Y., Patil P.S., Bhosale C.H., Kim J.H., J. Therm. Spray. Techn., 19 (2009), 531. http://dx.doi.org/10.1007/s11666-009-9412-410.1007/s11666-009-9412-4Search in Google Scholar

[21] Agashe C., Marateh B.R., J. Phys. D. Appl. Phys., 26 (1993), 2049. http://dx.doi.org/10.1088/0022-3727/26/11/03210.1088/0022-3727/26/11/032Search in Google Scholar

[22] Rozati S.M., Ganji T., Am. J. Appl. Sci., 2(6) (2005), 1106. 10.3844/ajassp.2005.1106.1108Search in Google Scholar

[23] Yang L.L., He X.D., He F., Li Y.B., Zhang S., Anc T., Zheng W.T., Thin Solid Films, 517 (2009), 4979. http://dx.doi.org/10.1016/j.tsf.2009.03.00810.1016/j.tsf.2009.03.008Search in Google Scholar

[24] Liu J., Wu D., Zeng S.H., J. Mater. Process. Tech., 209 (2009), 3943. http://dx.doi.org/10.1016/j.jmatprotec.2008.09.01610.1016/j.jmatprotec.2008.09.016Search in Google Scholar

Recommended articles from Trend MD

Plan your remote conference with Sciendo