1. bookVolume 31 (2013): Issue 3 (August 2013)
Journal Details
License
Format
Journal
eISSN
2083-134X
ISSN
2083-1331
First Published
16 Apr 2011
Publication timeframe
4 times per year
Languages
English
access type Open Access

Effect of working pressure on the structural, optical and electrical properties of titanium-gallium co-doped zinc oxide thin films

Published Online: 29 Aug 2013
Volume & Issue: Volume 31 (2013) - Issue 3 (August 2013)
Page range: 454 - 461
Journal Details
License
Format
Journal
eISSN
2083-134X
ISSN
2083-1331
First Published
16 Apr 2011
Publication timeframe
4 times per year
Languages
English
Abstract

The transparent conducting titanium-gallium co-doped zinc oxide (TGZO) thin films were grown on glass substrates by radio-frequency magnetron sputtering technique. The effects of working pressure on the structural, optical and electrical properties of the films were investigated. The results show that the deposited films are polycrystalline with a hexagonal wurtzite structure and highly textured along the c-axis perpendicular to the substrate. The TGZO film prepared at the working pressure of 0.4 Pa exhibits the best crystallinity, the maximal grain size, the highest transmittance, the lowest resistivity and the highest figure of merit. The optical constants of the films were calculated using the method of optical spectrum fitting. The dispersion behavior of the films was studied by the single-electronic oscillator dispersion model. The oscillator parameters and optical bandgaps were determined. The results demonstrate that the microstructure and optoelectrical properties of the TGZO films are dependent on the working pressure.

Keywords

[1] Tang C.W., Appl. Phys. Lett., 48 (1986), 183. http://dx.doi.org/10.1063/1.9693710.1063/1.96937Search in Google Scholar

[2] Li X., J. South-Cent. Univ. Nationlities (Nat. Sci. Ed.), 27 (2008), 14. Search in Google Scholar

[3] Zuo L. et al., Sol. Energy Mater. Sol. Cells, 95 (2011), 2664. http://dx.doi.org/10.1016/j.solmat.2011.05.03810.1016/j.solmat.2011.05.038Search in Google Scholar

[4] You Z.Z., Hua G.J., Mater. Lett., 65 (2011), 3234. http://dx.doi.org/10.1016/j.matlet.2011.06.11710.1016/j.matlet.2011.06.117Search in Google Scholar

[5] Li X., Tang D., J. South-Cent. Univ. Nationlities (Nat. Sci. Ed.), 28 (2009), 9. Search in Google Scholar

[6] Tang C.W., Vanslyke S.A., Appl. Phys. Lett., 51 (1987), 913. http://dx.doi.org/10.1063/1.9879910.1063/1.98799Search in Google Scholar

[7] Burroughes J.H. et al., Nature, 347 (1990) 539. http://dx.doi.org/10.1038/347539a010.1038/347539a0Search in Google Scholar

[8] Zhong Z.Y., Jiang Y.D., Phys. Status Solidi A, 203 (2006), 3882. http://dx.doi.org/10.1002/pssa.20062204710.1002/pssa.200622047Search in Google Scholar

[9] Chen S., Wei S., He X., Sun F., J. South-Cent. Univ. Nationlities (Nat. Sci. Ed.), 28 (2009), 43. http://dx.doi.org/10.1007/s11771-009-0007-510.1007/s11771-009-0007-5Search in Google Scholar

[10] You Z.Z., Mater. Lett., 61 (2007), 3809. http://dx.doi.org/10.1016/j.matlet.2006.12.06310.1016/j.matlet.2006.12.063Search in Google Scholar

[11] Huang H.-H., Chu S.-Y., Kao P.-C., Chen Y.-C., Yang M.-R., Tseng Z.-L., J. Alloy. Compd., 479 (2009), 520. http://dx.doi.org/10.1016/j.jallcom.2008.12.12210.1016/j.jallcom.2008.12.122Search in Google Scholar

[12] You Z.Z., Hua G.J., Lou S.F., Int. J. Electron., 98 (2011), 129. http://dx.doi.org/10.1080/00207217.2010.49767610.1080/00207217.2010.497676Search in Google Scholar

[13] Zhong Z.Y., Jiang Y.D., J. Colloid Interface Sci., 302 (2006), 613. http://dx.doi.org/10.1016/j.jcis.2006.07.00910.1016/j.jcis.2006.07.00916890950Search in Google Scholar

[14] Hu J., Zhou Y., Liu H., Meng L., Bao M., Song Z., J. South-Cent. Univ. Nationlities (Nat. Sci. Ed.), 29 (2010), 6. Search in Google Scholar

[15] Karaagac H., Yengel E., Islam M.S., J. Alloy. Compd., 521 (2012), 155. http://dx.doi.org/10.1016/j.jallcom.2012.01.10310.1016/j.jallcom.2012.01.103Search in Google Scholar

[16] You Z.Z., Hua G.J., J. Alloy. Compd., 530 (2012), 11. http://dx.doi.org/10.1016/j.jallcom.2012.03.07810.1016/j.jallcom.2012.03.078Search in Google Scholar

[17] Gu X.Q., Zhu L.P., Cao L., Ye Z.Z., He H.P., Chu P.K., Mater. Sci. Semicond. Process., 14 (2001), 48. http://dx.doi.org/10.1016/j.mssp.2011.01.00310.1016/j.mssp.2011.01.003Search in Google Scholar

[18] Jiang M., Liu X., Appl. Surf. Scie., 255 (2008), 3175. http://dx.doi.org/10.1016/j.apsusc.2008.09.01210.1016/j.apsusc.2008.09.012Search in Google Scholar

[19] Palani I.A., Nakamura D., Okazaki K., Highasiata M., Okada T., J. Alloy. Compd., 527 (2012), 112. http://dx.doi.org/10.1016/j.jallcom.2012.02.17710.1016/j.jallcom.2012.02.177Search in Google Scholar

[20] Kang J., Kim H. W., Lee C., J. Korean Phys. Soc., 56 (2010), 576. http://dx.doi.org/10.3938/jkps.56.57610.3938/jkps.56.576Search in Google Scholar

[21] Lee W. et al., Curr. Appl. Phys., 12 (2012), 628. http://dx.doi.org/10.1016/j.cap.2011.09.00810.1016/j.cap.2011.09.008Search in Google Scholar

[22] Zhong Z., Zhou J., Yang L., J. South-Cent. Univ. Nationlities (Nat. Sci. Ed.), 30 (2011), 34. Search in Google Scholar

[23] Maldonado A., Guillèn-Santiago A., de La L. Olvera M., Castanedo-Pèrez R., Torresdelgado G., Mater. Lett., 59 (2005), 1146. http://dx.doi.org/10.1016/j.matlet.2004.12.00610.1016/j.matlet.2004.12.006Search in Google Scholar

[24] He X., Xiong L., J. South-Cent. Univ. Nationlities (Nat. Sci. Ed.), 30 (2011), 70. Search in Google Scholar

[25] You Z.Z., Hua G.J., Yong Y.C., Jin H., Cryst. Res. Technol., 47 (2012), 1039. http://dx.doi.org/10.1002/crat.20120020110.1002/crat.201200201Search in Google Scholar

[26] Rao T.P., Kumar M.C.S., Angayarkanni S.A., Ashok M., J. Alloy. Compd., 485 (2009), 413. http://dx.doi.org/10.1016/j.jallcom.2009.05.11610.1016/j.jallcom.2009.05.116Search in Google Scholar

[27] Chen D., Li Q., Huang J., J. South-Cent. Univ. Nationlities (Nat. Sci. Ed.), 29 (2010), 14. Search in Google Scholar

[28] Peng L.P., Fang L., Yang X.F., Li Y.J., Huang Q.L., Wu F., Kong C.Y., J. Alloy. Compd., 484 (2009), 575. http://dx.doi.org/10.1016/j.jallcom.2009.04.13910.1016/j.jallcom.2009.04.139Search in Google Scholar

[29] Zhong Z., Gu J., He X., Sun F., J. South-Cent. Univ. Nationlities (Nat. Sci. Ed.), 28 (2009), 33. Search in Google Scholar

[30] Gopal S., Viswanathan C., Karunagaran B., Narayandass S.K., Mangalaraj D., Yi J., Cryst. Res. Technol., 40 (2005), 557. http://dx.doi.org/10.1002/crat.20041038310.1002/crat.200410383Search in Google Scholar

[31] You Z.Z., Hua G.J., Vacuum 83 (2009), 984. http://dx.doi.org/10.1016/j.vacuum.2008.11.01010.1016/j.vacuum.2008.11.010Search in Google Scholar

[32] Yadav H.K., Sreenivas K., Gupta V., J. Appl. Phys., 99 (2006), 083507. http://dx.doi.org/10.1063/1.218808310.1063/1.2188083Search in Google Scholar

[33] Zhiyou Z., Teng Z., Hao W., J. South-Cent. Univ. Nationlities (Nat. Sci. Ed.), 31 (2012), 66. Search in Google Scholar

[34] Mulato M., Chambouleyron I., Birgin E.G., Martínez J.M., Appl. Phys. Lett., 77 (2000), 2133. http://dx.doi.org/10.1063/1.131429910.1063/1.1314299Search in Google Scholar

[35] Zhong Z., Zhang T., Wang H., J. South-Cent. Univ. Nationlities (Nat. Sci. Ed.), 32 (2013), 58 Search in Google Scholar

[36] Al-Hardan N.H., Abdullah M.J., Aziz A.A., Ahmad H., Rashid M., Physica B, 405 (2010), 1081. http://dx.doi.org/10.1016/j.physb.2009.11.00610.1016/j.physb.2009.11.006Search in Google Scholar

[37] Sahu D.R., Huang J.-L., Sol. Energy Mater. Sol. Cells, 93 (2009), 1923. http://dx.doi.org/10.1016/j.solmat.2009.07.00410.1016/j.solmat.2009.07.004Search in Google Scholar

[38] Aksoy S., Caglar Y., Ilican S., Caglar M., J. Alloy. Compd., 512 (2012), 171. http://dx.doi.org/10.1016/j.jallcom.2011.09.05810.1016/j.jallcom.2011.09.058Search in Google Scholar

[39] Tanaka K., Thin Solid Films, 66 (1980), 271. http://dx.doi.org/10.1016/0040-6090(80)90381-810.1016/0040-6090(80)90381-8Search in Google Scholar

[40] Zribi M., Kanzari M., Rezig B., Mater. Lett., 60 (2006), 98. http://dx.doi.org/10.1016/j.matlet.2005.08.00110.1016/j.matlet.2005.08.001Search in Google Scholar

[41] Zhong Z., Gu J., He X., Sun F., Chen S., J. South-Cent. Univ. Nationlities (Nat. Sci. Ed.), 30 (2011), 64. Search in Google Scholar

[42] Gupta R.K., Ghosh K., Patel, R. Mishra S.R., Kahol P.K., J. Cryst. Growth, 310 (2008), 3019. http://dx.doi.org/10.1016/j.jcrysgro.2008.03.00410.1016/j.jcrysgro.2008.03.004Search in Google Scholar

[43] Aouaj M.A., Diaz R., Belayachi A., Rueda F., Abd-lefdil M., Mater. Res. Bull., 44 (2009), 1458. http://dx.doi.org/10.1016/j.materresbull.2009.02.01910.1016/j.materresbull.2009.02.019Search in Google Scholar

[44] Sun F., Hui S., J. South-Cent. Univ. Nationlities (Nat. Sci. Ed.), 28 (2009), 10. Search in Google Scholar

[45] Wemple S.H., Didomenico Jr M., Phys. Rev. B, 3 (1971), 1338. http://dx.doi.org/10.1103/PhysRevB.3.133810.1103/PhysRevB.3.1338Search in Google Scholar

[46] Zhu H., Hüpkes J., Bunte E., Gerber A., Huang S.M., Thin Solid Films, 518 (2010), 4997. http://dx.doi.org/10.1016/j.tsf.2010.02.06510.1016/j.tsf.2010.02.065Search in Google Scholar

[47] Zhong Z.Y., Zhang T., Mater. Lett., 96 (2013), 237. http://dx.doi.org/10.1016/j.matlet.2013.01.02510.1016/j.matlet.2013.01.025Search in Google Scholar

[48] Ma Q.-B., Ye Z.-Z., He H.-P., Zhu L.-P., Zhao B.-H., Mater. Sci. Semicond. Process., 10 (2007), 167. http://dx.doi.org/10.1016/j.mssp.2007.11.00110.1016/j.mssp.2007.11.001Search in Google Scholar

[49] Haacke G., J. Appl. Phys., 47 (1976), 4086. http://dx.doi.org/10.1063/1.32324010.1063/1.323240Search in Google Scholar

[50] Zhou J., Zhong Z.Y., Cryst. Res. Technol., 47 (2012), 944. http://dx.doi.org/10.1002/crat.20110057610.1002/crat.201100576Search in Google Scholar

[51] Kim D.-K., Kim H.-B., J. Alloy. Compd., 522 (2012), 69. http://dx.doi.org/10.1016/j.jallcom.2012.01.07810.1016/j.jallcom.2012.01.078Search in Google Scholar

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