1. bookVolume 31 (2013): Issue 3 (August 2013)
Journal Details
License
Format
Journal
eISSN
2083-134X
ISSN
2083-1331
First Published
16 Apr 2011
Publication timeframe
4 times per year
Languages
English
access type Open Access

Formation of silicon oxide nanowires in nanomaterial synthesis experiments based on the usage of tube furnace

Published Online: 29 Aug 2013
Volume & Issue: Volume 31 (2013) - Issue 3 (August 2013)
Page range: 350 - 356
Journal Details
License
Format
Journal
eISSN
2083-134X
ISSN
2083-1331
First Published
16 Apr 2011
Publication timeframe
4 times per year
Languages
English
Abstract

In an effort to synthesize doped ZnO nanowires, SiOx nanowires were obtained accidently. In the experiment, mixed powders containing chemicals such as ZnO, graphite, Ga2O3, and In2O3 were placed in the center of a tube furnace, where the temperature was set to 1200 °C and the vacuum was approximately 27 Pa. Silicon wafers were placed around the vicinity of the furnace exit to collect the expected nanomaterials. After prolonged heating, grey layers were found on top of one wafer located inside the furnace. The layer showed no adhesion to the substrate. Characterization by using Scanning Electron Microscope (SEM), Transmission Electron Microscope (TEM), and Energy Dispersive X-ray Spectroscopy (EDS) revealed that this layer consisted of SiOx nanowires. Formation of Si-containing liquid drop and the subsequent growth of SiOx nanowires out of it are suggested as the growth mechanism.

Keywords

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