1. bookVolume 29 (2011): Issue 4 (December 2011)
Journal Details
License
Format
Journal
eISSN
2083-134X
ISSN
2083-1331
First Published
16 Apr 2011
Publication timeframe
4 times per year
Languages
English
access type Open Access

Reactive ion etching of GaN and AlGaN/GaN assisted by Cl2/BCl3

Published Online: 08 May 2012
Volume & Issue: Volume 29 (2011) - Issue 4 (December 2011)
Page range: 260 - 265
Journal Details
License
Format
Journal
eISSN
2083-134X
ISSN
2083-1331
First Published
16 Apr 2011
Publication timeframe
4 times per year
Languages
English
Abstract

This work reports on the latest results of etching of different AlxGa1−x N/GaN heterostructures in relation to percentage composition of aluminum. The etching processes were carried out in a reactive ion etching (RIE) system using the mixture of BCl3/Cl2/Ar. The topography of the heterostructures surfaces and the slope were controlled using atomic force microsopy (AFM) technique. The photoluminescence spectra were used to determine the surface damage and to calculate the Al content in AlGaN/GaN heterostructures commonly used for high electron mobility transistors (HEMTs) fabrication.

Keywords

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