1. bookVolume 29 (2011): Issue 3 (September 2011)
Journal Details
License
Format
Journal
eISSN
2083-134X
ISSN
2083-1331
First Published
16 Apr 2011
Publication timeframe
4 times per year
Languages
English
access type Open Access

Mechanisms of carriers transport in Ni/n-SiC, Ti/n-SiC ohmic contacts

Published Online: 29 Feb 2012
Volume & Issue: Volume 29 (2011) - Issue 3 (September 2011)
Page range: 233 - 240
Journal Details
License
Format
Journal
eISSN
2083-134X
ISSN
2083-1331
First Published
16 Apr 2011
Publication timeframe
4 times per year
Languages
English
Abstract

A mechanism of carriers transport through metal-semiconductor interface created by nickel or titanium-based ohmic contacts on Si-face n-type 4H-SiC is presented herein. The mechanism was observed within the temperature range of 20 °C ÷ 300 °C which are typical for devices operating at high current density and at poor cooling conditions. It was found that carriers transport depends strongly on concentration of dopants in the epitaxial layer. The carriers transport has thermionic emission nature for low dopant concentration of 5×1016 cm−3. The thermionic emission was identified for moderate dopant concentration of 5×1017 cm−3 at temperatures higher than 200 °C. Below 200 °C, the field emission dominates (for the same doping level of 5×1017 cm−3). High dopant concentration of 5×1018 cm−3 leads to almost pure field emission transport within the whole investigated temperature range.

Keywords

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