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Journals
Journal of Electrical Engineering
Volume 69 (2018): Issue 5 (September 2018)
Open Access
Channel temperature analysis of AlGaN/GaN HEMTs in quasi-static and pulse operation mode
Martin Florovič
Martin Florovič
,
Róbert Szobolovszký
Róbert Szobolovszký
,
Jaroslav Kováč
Jaroslav Kováč
,
Jaroslav Kováč
Jaroslav Kováč
,
Aleš Chvála
Aleš Chvála
,
Jean-Claude Jacquet
Jean-Claude Jacquet
and
Sylvain Laurent Delage
Sylvain Laurent Delage
| Dec 14, 2018
Journal of Electrical Engineering
Volume 69 (2018): Issue 5 (September 2018)
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Published Online:
Dec 14, 2018
Page range:
390 - 394
Received:
Aug 09, 2018
DOI:
https://doi.org/10.2478/jee-2018-0057
Keywords
high-electron-mobility transistor (HEMT)
,
AlGaN/GaN
© 2018 Martin Florovič et al., published by Sciendo
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.