<abstract xmlns="http://www.w3.org/1999/xhtml"><p> The amorphous silicon carbide/crystalline silicon heterojunction was prepared and analyzed. The current-voltage (I − V ) measurements showed the barrier properties of prepared sample. Biased impedance spectra of Al/a-SiC/c-Si(p)/Al heterojunction under the standard illumination are reported and analyzed. AC measurements in the illuminated conditions were processed in order to identify electronic behavior using equivalent AC circuit which was suggested and obtained by fitting the measured impedance data. A phenomenon of negative capacitance/resistance in certain frequency range has been observed.</p></abstract>

The amorphous silicon carbide/crystalline silicon heterojunction was prepared and analyzed. The current-voltage (I − V ) measurements showed the barrier properties of prepared sample. Biased impedance spectra of Al/a-SiC/c-Si(p)/Al heterojunction under the standard illumination are reported and analyzed. AC measurements in the illuminated conditions were processed in order to identify electronic behavior using equivalent AC circuit which was suggested and obtained by fitting the measured impedance data. A phenomenon of negative capacitance/resistance in certain frequency range has been observed.

Ac Impedance Spectroscopy Of Al/A-Sic/C–Si(P)/Al Heterostructure under Illumination

Slovak University of Technology, Faculty of Electrical Engineering and Information Technology, Ilkovičova 3, SK-81219 Bratislava, Slovakia

Slovak Academy of Sciences, Institute of Electrical Engineering, Dúbravská cesta 9, 841 04 Bratislava, Slovakia

Journal of Electrical Engineering

This article is distributed under the terms of the Creative Commons Attribution Non-Commercial License, which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.

The amorphous silicon carbide/crystalline silicon heterojunction was prepared and analyzed. The current-voltage (I − V ) measurements showed the barrier...

Ac Impedance Spectroscopy Of Al/A-Sic/C–Si(P)/Al Heterostructure under Illumination

Published Online: Jun 17, 2014

Page range: 174 - 178

Received: Oct 24, 2013

DOI: https://doi.org/10.2478/jee-2014-0027

Keywords
PECVD, heterojunction, silicon carbide, equivalent AC circuit, complex impedance

© Faculty of Electrical Engineering and Information Technology, Slovak University of Technology

This article is distributed under the terms of the Creative Commons Attribution Non-Commercial License, which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.

Ac Impedance Spectroscopy Of Al/A-Sic/C–Si(P)/Al Heterostructure under Illumination

Published Online: Jun 17, 2014

Page range: 174 - 178

Received: Oct 24, 2013

DOI: https://doi.org/10.2478/jee-2014-0027

KeywordsPECVD, heterojunction, silicon carbide, equivalent AC circuit, complex impedance

© Faculty of Electrical Engineering and Information Technology, Slovak University of Technology

This article is distributed under the terms of the Creative Commons Attribution Non-Commercial License, which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.

Keywords
PECVD, heterojunction, silicon carbide, equivalent AC circuit, complex impedance