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Materials Science-Poland
Volume 34 (2016): Issue 2 (June 2016)
Open Access
Characteristics of TlBr single crystals grown using the vertical Bridgman-Stockbarger method for semiconductor-based radiation detector applications
Dong Jin Kim
Dong Jin Kim
,
Joon-Ho Oh
Joon-Ho Oh
,
Han Soo Kim
Han Soo Kim
,
Young Soo Kim
Young Soo Kim
,
Manhee Jeong
Manhee Jeong
,
Chang Goo Kang
Chang Goo Kang
,
Woo Jin Jo
Woo Jin Jo
,
Hyojeong Choi
Hyojeong Choi
,
Jong Guk Kim
Jong Guk Kim
,
Seung Hee Lee
Seung Hee Lee
and
Jang Ho Ha
Jang Ho Ha
| Jun 18, 2016
Materials Science-Poland
Volume 34 (2016): Issue 2 (June 2016)
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Article Category:
Research Article
Published Online:
Jun 18, 2016
Page range:
297 - 301
Received:
Jun 10, 2015
Accepted:
Jan 13, 2016
DOI:
https://doi.org/10.1515/msp-2016-0034
Keywords
semiconductor single crystal
,
TlBr
,
radiation detection
,
crystalline quality
,
impurity
,
resistivity
,
optical bandgap
© Wroclaw University of Technology
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.