Electrophysical Properties of GaAs P–I–N Structures for Concentrator Solar Cell Applications

This paper is dedicated to electro-physical characterisation of a GaAs p-i-n structure grown for solar cell applications, which was carried out by light and dark current-voltage (I–V) and Deep Level Transient Fourier Spectroscopy (DLTFS) methods. The conversion efficiency and open-circuit voltage were determined from I–V measurement at 1 and 20× sun light concentrations. Three electron like defects TA_n1, TA_n2, TD_n and one hole like defect TBp obtained by DLTFS measurements were confirmed. The origin of these defect states was stated as native GaAs impurities.