<abstract xmlns="http://www.w3.org/1999/xhtml"><p>The paper reports on a non-destructive method of reliability prediction for semiconductor lasers diodes GaSb based VCSE (vertical cavity surface emitting). Transport and noise characteristic of forward biased were measured in order to evaluate the new MBE (molecular beam epitaxy) technology. The results demonstrate that the lasers prepared by new MBE technology have higher quality than the samples prepared by using the classic MBE technology.</p></abstract>

The paper reports on a non-destructive method of reliability prediction for semiconductor lasers diodes GaSb based VCSE (vertical cavity surface emitting). Transport and noise characteristic of forward biased were measured in order to evaluate the new MBE (molecular beam epitaxy) technology. The results demonstrate that the lasers prepared by new MBE technology have higher quality than the samples prepared by using the classic MBE technology.

Low–Frequency Noise Measurements Used For Quality Assessment Of GaSb Based Laser Diodes Prepared By Molecular Beam Epitaxy

Faculty of Civil Engineering, Department of physics, Brno University of Technology, Žižkova 17, 602 00 Brno, Czech Republic

Faculty of Electrical Engineering and Communication, Department of Electrotechnology, Brno University of Technology, Technická 10, 616 00 Brno, Czech Republic

Department of Physics AVČR, Cukrovarnická 10, 162 53 Praha 6, Czech Republic

Journal of Electrical Engineering

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

The paper reports on a non-destructive method of reliability prediction for semiconductor lasers diodes GaSb based VCSE (vertical cavity surface emitting)....

Low–Frequency Noise Measurements Used For Quality Assessment Of GaSb Based Laser Diodes Prepared By Molecular Beam Epitaxy

Publié en ligne: 19 sept. 2015

Pages: 226 - 230

Reçu: 13 nov. 2014

DOI: https://doi.org/10.2478/jee-2015-0036

Mots clés
molecular beam epitaxy, excess nois, lasers diodes, vertical cavity surface emitting, gasb substrate

© Faculty of Electrical Engineering and Information Technology, Slovak University of Technology

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Low–Frequency Noise Measurements Used For Quality Assessment Of GaSb Based Laser Diodes Prepared By Molecular Beam Epitaxy

Publié en ligne: 19 sept. 2015

Pages: 226 - 230

Reçu: 13 nov. 2014

DOI: https://doi.org/10.2478/jee-2015-0036

Mots clésmolecular beam epitaxy, excess nois, lasers diodes, vertical cavity surface emitting, gasb substrate

© Faculty of Electrical Engineering and Information Technology, Slovak University of Technology

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Mots clés
molecular beam epitaxy, excess nois, lasers diodes, vertical cavity surface emitting, gasb substrate