Accès libre

Employment Of IGBT-Transistors For Bipolar Impulsed Micro-Arc Oxidation

À propos de cet article

Citez

1. Gordienko, P., Dostovalov, I., Zhevtun I., Shabalin, I. (2013) Micro-arc oxidation for pulse polarization in galvanic-dynamical mode. Electronic Processing of Materials, 49(4), p.35–42 (in Russian).10.3103/S1068375513040066Search in Google Scholar

2. Martinenko, V., Muskatjev, V., Chibirkin, V. (2004) New constructions of IGBT modules for high-voltage applications. HiT: Design in Electronics, № 4. p.1–4 (in Russian).Search in Google Scholar

3. Nikitin, A. (2010) Modern high-voltage drivers for IGBT and MOSFET transistors. News of Electronics, № 6. p. 32 – 36 (in Russian).Search in Google Scholar

4. Suminov, I., Belkin, P., Epelfeild, A., Ljudin, V., Krit, B., Borisov, A. (2011) Plasma Electrolytic modification of the metal and alloys surface. Moscow, Technosphera, 464 pp. (in Russian).Search in Google Scholar

5. Suminov, I., Epelfeild, A., Ljudin, V., Krit, B., Borisov, A. (2005) Micro-arc oxidation (theory, technology, equipment), Moscow, ECOMET, 368 pp. (in Russian).Search in Google Scholar

eISSN:
1407-6179
Langue:
Anglais
Périodicité:
4 fois par an
Sujets de la revue:
Engineering, Introductions and Overviews, other