<abstract xmlns="http://www.w3.org/1999/xhtml"><p>The paper is devoted to the use of insulated gate bipolar transistors (IGBT) for the micro-arc oxidation (MAO) process. The technical requirements to the current switches of power supplies for the pulsed bipolar MAO technology have been developed. The research installation for investigating the IGBT commutation processes during the pulse anode-cathode oxidation has been constructed. The experiments have been performed with its help in order to estimate the possibility of using half-bridge IGBT-modules with different drivers. The research results of the commutation processes investigation for different IGBT half- bridge modules are presented.</p></abstract>

The paper is devoted to the use of insulated gate bipolar transistors (IGBT) for the micro-arc oxidation (MAO) process. The technical requirements to the current switches of power supplies for the pulsed bipolar MAO technology have been developed. The research installation for investigating the IGBT commutation processes during the pulse anode-cathode oxidation has been constructed. The experiments have been performed with its help in order to estimate the possibility of using half-bridge IGBT-modules with different drivers. The research results of the commutation processes investigation for different IGBT half- bridge modules are presented.

Employment Of IGBT-Transistors For Bipolar Impulsed Micro-Arc Oxidation

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Transport and Telecommunication Journal

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

{"article-title":"Employment Of IGBT-Transistors For Bipolar Impulsed Micro-Arc Oxidation"}

The paper is devoted to the use of insulated gate bipolar transistors (IGBT) for the micro-arc oxidation (MAO) process. The technical requirements to the...

Employment Of IGBT-Transistors For Bipolar Impulsed Micro-Arc Oxidation

Publié en ligne: 22 juin 2015

Pages: 217 - 223

DOI: https://doi.org/10.1515/ttj-2015-0020

Mots clés
micro-arc oxidation, insulated gate bipolar transistors, high voltage, commutation process, ballast resistance

© Transport and Telecommunication Institute

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Employment Of IGBT-Transistors For Bipolar Impulsed Micro-Arc Oxidation

Publié en ligne: 22 juin 2015

Pages: 217 - 223

DOI: https://doi.org/10.1515/ttj-2015-0020

Mots clésmicro-arc oxidation, insulated gate bipolar transistors, high voltage, commutation process, ballast resistance

© Transport and Telecommunication Institute

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Mots clés
micro-arc oxidation, insulated gate bipolar transistors, high voltage, commutation process, ballast resistance